Acta Chimica Sinica ›› 2013, Vol. 71 ›› Issue (03): 308-322.DOI: 10.6023/A13010023 Previous Articles     Next Articles



张朝华a, 付磊b, 张艳锋a, 刘忠范a   

  1. a 北京大学纳米化学研究中心 北京大学化学与分子工程学院物理化学研究所 北京大学前沿交叉学科研究院纳米科学与技术研究中心 北京 100871;
    b 武汉大学化学与分子科学学院 武汉 430072
  • 投稿日期:2013-01-06 发布日期:2013-02-04
  • 通讯作者: 刘忠范
  • 基金资助:


Segregation Phenomenon and Its Control in the Catalytic Growth of Graphene

Zhang Chaohuaa, Fu Leib, Zhang Yanfenga, Liu Zhongfana   

  1. a Center for Nanochemistry, College of Chemistry and Molecular Engineering, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871;
    b College of Chemistry and Molecular Science, Wuhan University, Wuhan 430072
  • Received:2013-01-06 Published:2013-02-04
  • Supported by:

    Project supported by the National Natural Science Foundation of China (Nos. 51121091, 20973103, 51072004), and the National Basic Research Program of China (Nos. 2011CB933003, 2012CB933404).

Graphene, a sp2-hybridized two-dimensional honeycomb structure of carbon, has attracted great attentions because of its excellent electrical, optical and mechanical properties. One of the major challenges for its various applications is the production of large-area and high-quality graphene. Among the typical approaches reported up to now, catalytic growth on metal surfaces has become the most attractive technique for graphene synthesis with high quality. Segregation, which refers to the enrichment of carbon onto the surface of metals, is one of the key elementary steps for the catalytic growth of graphene on metal surface. In this paper, we will systematically study the segregation phenomenon and the possibility of its control for graphene growth. We will also demonstrate the typical approaches we have developed for growing high-quality graphene by designing and controlling the segregation process, which include segregation technique, co-segregation, synergistic bimetal alloy technique, etc. For instance, with a designed binary alloy, such as Ni/Mo, Co/Mo, or Fe/Mo, we effectively suppressed the carbon precipitation step and achieved perfect single layer graphene with 100% surface coverage by chemical vapor deposition method. With a segregation-only process of carbon atoms predissolved in bulk metals such as Ni, Co, Ni-Cu alloy and Fe, we succeeded in growing wafer-scale high-quality graphene without using extraneous carbon sources. Using co-segregation technique, we could directly grow nitrogen-doped graphene on nickel with controlled dopant concentration and spatial location. These studies will greatly help to understand the catalytic growth process of graphene and further promote its practical applications.

Key words: graphene, segregation phenomenon, equilibrium and non-equilibrium segregation, chemical vapor deposition, layer control, doping control