液桥限域长程有序组装及其光电应用★

doi:10.6023/A25050189

化学学报 ›› 2025, Vol. 83 ›› Issue (10): 1267-1284.DOI: 10.6023/A25050189 上一篇下一篇

综述

液桥限域长程有序组装及其光电应用^★

孟子博^a, 张超^a, 高寒飞^a^,^*(), 文雯^a^,^*(), 吴雨辰^a^,^b^,^*()

^a 中国科学技术大学苏州高等研究院仿生界面材料科学全国重点实验室江苏苏州 215123
^b 中国科学院理化技术研究所仿生材料与界面科学重点实验室北京 100190

投稿日期:2025-05-26 发布日期:2025-07-21
通讯作者: 高寒飞, 文雯, 吴雨辰

作者简介:

孟子博, 2024年7月于苏州大学获得工学学士学位,同年进入中国科学技术大学攻读硕士学位.

张超, 2021年7月于东北电力大学毕业, 现为中国科学技术大学化学与材料学院物理化学系博士研究生.

高寒飞, 中国科学技术大学苏州高等研究院特任研究员, 博士生导师, 主要从事特殊浸润性界面诱导微纳米粒子图案化组装及相关光电应用研究. 先后获得中国科学院院长优秀奖、北京市优秀毕业生、中国科学院朱李月华奖学金等. 共发表SCI论文61篇, 其中第一作者(含共同一作)及通讯作者论文共29篇, 包括Nat. Commun. 2篇, Adv. Mater. 2篇, Matter 1篇, Adv. Funct. Mater. 6篇等, 申请发明专利8项(目前已授权1项), 作为负责人承担国家自然科学基金委青年科学基金等国家级科研项目2项.

文雯, 中国科学技术大学苏州高等研究院特任研究员, 博士生导师. 2019年6月于中国科学院大学国家纳米科学中心获理学博士学位. 博士毕业后于国家纳米科学中心和新加坡南洋理工大学从事博士后研究工作. 2024年9月加入中国科学技术大学苏州高等研究院开展工作, 主要研究方向为半导体纳米制造与纳米光子学. 在国际综合和专业期刊已发表论文34篇, 其中近年来, 以第一/共一作者发表SCI论文14篇, 包括PRL, Advanced Materials, Nano Letters, Small等.

吴雨辰, 中国科学院理化技术研究所研究员, 博士生导师. 2016年于中国科学院化学研究所获物理化学博士学位. 长期从事液相微纳制造技术及微纳功能器件研究, 基于界面限域效应提出液桥限域组装方法, 共发表SCI论文114篇, 以第一/通讯作者在Nat. Nanotechnol., Nat. Electron., Nat. Commun., Sci. Adv., J. Am. Chem. Soc., Adv. Mater.等国际期刊发表论文66篇, H因子37, 并受邀在Acc. Chem. Res., J. Am. Chem. Soc., Adv. Mater.等期刊撰写综述和前瞻论文, 申请国家发明专利30项, 授权11项. 曾获基金委杰出青年科学基金、中国化学会青年化学奖、中国化学会纳米化学新锐奖、中国科学院青促会优秀会员、中国科学院院长特别奖等. 相关研究成果被Nature, Nature Electronics等杂志进行专题报道. 担任中国化学会奖励推荐委员会委员、Wiley旗下《SmartMat》编委、《高等学校化学学报》编委等.

^★ “中国青年化学家”专辑.

基金资助:
国家重点研究发展计划(2024YFB3612800); 国家自然科学基金(T2425026); 国家自然科学基金(22205077); 国家自然科学基金(52173190); 国家自然科学基金(62234006); 中国科学院青年创新促进会(2018034)

Liquid-Bridge-Confined Long-Range-Ordered Assembly and Optoelectronic Applications^★

Zibo Meng^a, Chao Zhang^a, Hanfei Gao^a^,^*(), Wen Wen^a^,^*(), Yuchen Wu^a^,^b^,^*()

^a State Key Laboratory of Bioinspired Interfacial Materials Science, Suzhou Institute for Advanced Research, University of Science and Technology of China, Suzhou, Jiangsu, 215123
^b Key Laboratory of Bio-inspired Materials and Interfacial Science, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190

Received:2025-05-26 Published:2025-07-21
Contact: Hanfei Gao, Wen Wen, Yuchen Wu
About author:
^★ For the VSI “Rising Stars in Chemistry”.
Supported by:
National Key Research and Development Program of China(2024YFB3612800); National Natural Science Foundation of China(T2425026); National Natural Science Foundation of China(22205077); National Natural Science Foundation of China(52173190); National Natural Science Foundation of China(62234006); Youth Innovation Promotion Association CAS(2018034)

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摘要/Abstract

微纳制造技术作为材料与功能器件的关键桥梁, 在信息技术、柔性电子等领域具有重要应用. 传统互补金属氧化物半导体(Complementary metal-oxide-semiconductor, CMOS)工艺受限于刻蚀和高温等苛刻条件, 难以满足新型材料的加工需求. 液相法虽具条件温和的优势, 但需解决宏观均匀性、微观精度及材料有序组装等多重挑战. 基于此, 超浸润界面调控的液桥限域组装技术通过精准操控微流体定向输运与材料单元有序排列, 为跨尺度制造提供了新范式. 此文系统阐释了液桥限域组装的动力学机制, 揭示了超浸润表面对三相接触线及液桥结构的调控规律. 该技术基于限域效应实现了有机分子、聚合物、量子点和微米粒子等跨尺度溶液加工材料的高精度图案化与长程有序组装. 此文还深入探讨了材料长程有序组装对于光学、光电子学与微电子学器件性能提升和功能拓展等方面的贡献, 并依次介绍了液桥限域组装技术在微激光器阵列、激光-波导耦合器件、量子点发光二极管、偏振光探测与方位识别、柔性可穿戴器件等前沿领域中的最新进展. 最后, 总结了液桥限域组装在多材料体系和复杂基底上的普适性与图案可控性, 展望了其在光子集成、可穿戴器件及量子信息等领域的进一步发展方向.

关键词: 液桥限域, 超浸润界面, 长程有序组装, 光电应用

Micro/nano-fabrication technology, as a critical bridge between materials and functional devices, holds significant applications in information technology and flexible electronics. Conventional complementary metal-oxide-semiconductor (CMOS) processes are constrained by harsh conditions such as etching and high-temperature treatments, thus facing challenges in processing emerging materials. Solution-based methods offer mild processing, yet navigating the trade-offs between macroscopic size uniformity, microscopic position precision, and ordered material assembly. Addressing these limitations, the liquid-bridge-confined assembly strategy enabled by superwetting interface engineering has emerged as a novel paradigm for cross-scale manufacturing through precise manipulation of microfluidic directional transport and ordered assembly of material units. This review systematically elucidates the dynamic mechanisms underlying liquid-bridge-confined assembly, revealing fundamental principles governing the regulation of three-phase contact lines and liquid bridge architectures through superwetting surface design. The technology demonstrates exceptional capability in high-precision patterning and long-range ordered assembly of solution-processable materials spanning organic molecules, polymers, quantum dots, and microparticles via confinement effects. Furthermore, the review critically examines how long-range order of material architectures enhance device performance and functional diversification in optoelectronics and microelectronics, exemplified by recent advancements in: (1) microlaser arrays with controlled mode coupling, (2) laser-waveguide coupling devices, (3) quantum dot light-emitting diodes (QLEDs), (4) polarization-sensitive photodetectors, and (5) flexible wearable systems. Finally, the review concludes by highlighting the universal applicability of liquid-bridge-confined assembly across multi-material systems and complex substrates, while outlining future directions in photonic integration, wearable biotechnology, and quantum information processing through programmable interfacial engineering.

Key words: liquid bridge confinement, superwetting interfaces, long-range ordered assembly, optoelectronic applications

引用此文

孟子博, 张超, 高寒飞, 文雯, 吴雨辰. 液桥限域长程有序组装及其光电应用^★[J]. 化学学报, 2025, 83(10): 1267-1284.

Zibo Meng, Chao Zhang, Hanfei Gao, Wen Wen, Yuchen Wu. Liquid-Bridge-Confined Long-Range-Ordered Assembly and Optoelectronic Applications^★[J]. Acta Chimica Sinica, 2025, 83(10): 1267-1284.

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图/表 10

图1. 液体的宏观退浸润行为. (a)表面浸润性与杨氏方程. (b)接触角滞后性示意图. (c)液体三相接触线附近的动力学模型. (d)咖啡环效应的形成过程

Figure 1. Interfacial wettability and dewetting behavior. (a) Surface wettability and Young’s equation. (b) Schematic illustration of contact angle hysteresis. (c) Dynamic model near the three-phase contact line. (d) Formation process of the coffee-ring effect

图2. 液桥的形成机制. (a)拉普拉斯压力差驱动液桥形成. (b)特殊模板诱导产生的储液区与液桥形成过程. (c)特殊液桥结构的荧光显微镜图像. (d) 4英寸晶圆上实现的高均匀性结构[35]

Figure 2. Mechanism of Liquid Bridge Formation. (a) Formation of liquid bridges driven by Laplace pressure difference. (b) Reservoir area formation and liquid bridge generation induced by special templates. (c) Fluorescence microscopy image of a special liquid bridge structure. (d) High-uniformity structure achieved on a 4-inch wafer.[35] Copyright 2021, Springer Nature

图3. 液桥限域组装机理. (a)三相接触线附近的受力分析. (b)不同弯液面直径Dm的液桥退浸润过程荧光图像. (c)退浸润过程中组装动力学与Dm的关系[37]. (d)三相接触线的锚定与移动诱导组装单元形成长程有序结构[39]. (e)三相接触线附近的组装过程模拟[38]

Figure 3. Mechanism of confined assembly via liquid bridges. (a) Force analysis near the three-phase contact line. (b) Fluorescence images of dewetting liquid bridges with different meniscus diameters (Dm). (c) Relationship between assembly dynamics and Dm during the dewetting process[37]. Copyright 2022, Wiley-VCH. (d) Formation of long-range ordered structures induced by pinning and movement of the three-phase contact line[39]. Copyright 2018, Wiley-VCH. (e) Simulation of the assembly process near the three-phase contact line[38]. Copyright 2022, Wiley-VCH

图4. 液桥限域组装技术的普适性分析. (a)液桥的影响因素与半定量的普适性公式[39]. (b)液桥限域组装技术在不同尺度材料下的普适性[39,40-42].

Figure 4. Universality analysis of liquid-bridge-confined assembly. (a) Influencing factors of liquid bridges and a semi-quantitative universal formula[39]. Copyright 2018, Wiley-VCH. (b) Universality of the liquid bridge confined assembly technique across materials of different scales[39,40-42]. Copyright 2018, 2022, Wiley-VCH

图5. 长程有序结构对材料光电性质的影响. (a)有序的π-π重叠[43]. (b)电子带状传输[44]. (c)电子离域增强[45]. (d)尺寸依赖的光电性能优化[53]

Figure 5. Effects of long-range ordered structures on the optoelectronic properties of materials. (a) Ordered π-π stacking[43]. Copyright 2024, Wiley-VCH. (b) Band-like electron transport[44]. Copyright 2019, Springer Nature. (c) Enhanced electron delocalization[45]. Copyright 2023, Wiley-VCH. (d) Optimization of size-dependent photoelectric properties[53]. Copyright 2018, Springer Nature

图6. 微型激光器. (a)有机纳米线阵列的荧光显微图像与透射电子显微镜图像. (b)长度分别为20、50和70 mm的纳米线的荧光显微图像、电场分布模拟结果及激光发射光谱[57]. (c)毛细管桥组装系统的退浸润过程示意图(上)与荧光显微镜图像(下). (d)光密码学基元认证原理示意图. (e)不同激光发射的腔长分布统计. (f) 64×16位四元随机比特阵列[58]. (g)调控不同界面浸润性实现分级限域组装过程的原理示意图. (h)多组分红绿蓝(RGB)量子点微环阵列的荧光显微图像及对应的原子力显微镜图像与扫描电子显微镜图像. (i) R, G, B量子点激光像素的光致发光(PL)光谱[59]

Figure 6. Micro laser devices. (a) Fluorescence microscopy image and transmission electron microscopy image of organic nanowire arrays. (b) Fluorescence microscopy images, electric field distribution simulation results, and laser emission spectra of nanowires with lengths of 20, 50, and 70 mm[57]. Copyright 2020, Elsevier. (c) Schematic of the dewetting process in the capillary-bridge assembly system (top) and corresponding fluorescence microscopy image (bottom). (d) Schematic of the authentication principle for cryptographic primitives. (e) Statistical distribution of cavity lengths for different laser emissions. (f) 64×16 quaternary random bit array[58]. Copyright 2019, Wiley-VCH. (g) Schematic of the hierarchical confined assembly process achieved by controlling different interface wettabilities. (h) Fluorescence microscopy image of multicomponent red-green-blue (RGB) quantum dot microring arrays, along with corresponding atomic force microscopy and scanning electron microscopy images. (i) Photoluminescence (PL) spectra of R, G, and B quantum dot laser pixels[59]. Copyright 2024, Wiley-VCH

图7. 激光-波导耦合结构. (a)液桥中静电外延机制定向调控钙钛矿成核与生长机制. (b)耦合双微线的阈值上空间分辨PL光谱. (c)阈值上的耦合双微线条的荧光显微图像与实空间PL图像(左)和归一化PL光谱(右), 各对应位置激光模式能量匹配[64]. (d)微环-波导耦合组装结构示意图. (e)荧光显微图像, 扫描电子显微镜图像与有限元模拟对比的微环与波导结构. (f)对应光谱数据显示微环激光发射峰与波导激光发射峰. (g)微环激光器激发与输出场景的对应关系(左), 四个输出场景的荧光显微图像(右). (h)基于ASCII编码的概念验证, 将光信号组合转换为字符[37]

Figure 7. Laser-waveguide coupling structures. (a) Electrostatic epitaxy mechanism in the liquid bridge for oriented control of perovskite nucleation and growth. (b) Spatially resolved PL spectra at the lasing threshold of coupled dual microwires. (c) Fluorescence microscopy image and real-space PL image (left), and normalized PL spectra (right) of coupled microwires at threshold, showing mode energy matching at specific positions[64]. Copyright 2023, Wiley-VCH. (d) Schematic of the micro-ring-waveguide coupled assembly. (e) Fluorescence microscopy, SEM image, and finite element simulation of the micro-ring and waveguide structure. (f) Corresponding spectral data showing lasing peaks from both the micro-ring and waveguide. (g) Correlation between micro-ring laser excitation and output states (left), with fluorescence images of four output conditions (right). (h) Conceptual demonstration of ASCII encoding by converting combinations of optical signals into characters[37]. Copyright 2022, Springer Nature

图8. 发光二极管. (a)微柱模板的抗粘附改性处理. (b) InP基绿色量子点薄膜扫描电镜图像. (c) QLED器件结构示意图. (d) InP基红色QLED大面积器件及其电流密度-亮度-电压特性曲线和外量子效率-电流效率-亮度特性曲线[70]. (e)分层限域组装工艺示意, 通过正交方向沉积构建交叉像素阵列. (f)不同CBP-V含量下交联处理的蓝色量子点薄膜光致发光保留率随时间变化曲线. (g) RGB量子点像素单元荧光显微图像. (h)全彩色QLED器件结构. (i)器件工作状态下的外量子效率-亮度特性曲线与不同驱动电压下的电致发光(PL)图谱. (j)器件在CIE色度图中的坐标分布[68]

Figure 8. Light-emitting diodes. (a) Anti-adhesion modification of micropillar templates. (b) SEM image of InP-based green quantum dot film. (c) Schematic of the QLED device structure. (d) Large-area InP-based red QLED device and its current density-luminance-voltage and EQE-current efficiency-luminance characteristics[70]. Copyright 2025, Springer Nature. (e) Schematic of layered confined assembly for cross pixel array construction via orthogonal deposition. (f) Time-dependent photoluminescence retention of blue quantum dot films with different CBP-V contents after crosslinking. (g) Fluorescence microscopy image of RGB quantum dot pixel units. (h) Structure of the full-color QLED device. (i) EQE-luminance characteristics and EL (PL) spectra under varying driving voltages. (j) CIE chromaticity coordinate distribution of the devices[68]. Copyright 2025, American Chemical Society

图9. 偏振光电探测器件. (a)偏振响应微线器件示意图. (b)微线内长程有序高取向性结构的高分辨率扫描电镜特写. (c)组装微线器件在不同光强下的I-V特性曲线[39]. (d)集成线偏振与圆偏振光探测的多功能光电探测器示意图与纳米线的掠入射广角X射线散射图谱. (e)不同斯托克斯参量对应的光偏振态与理论吸收值的偏振依赖性. (f)不同偏振光下的实验测量值与理论值对比[76]. (g)垂直亚波长钙钛矿纳米线阵列的扫描电镜图像. (h)用于检测三维空间光入射方向的垂直钙钛矿纳米线结构与对应的模拟结果极坐标图. (i)基于同一水平面上相距5 cm的两个垂直角度传感装置的光源空间定位示意图[70]

Figure 9. Polarized optoelectronic detector devices. (a) Schematic of a polarization-responsive microwire device. (b) High-resolution SEM close-up of highly oriented, long-range ordered structures inside the microwire. (c) I-V curves of the assembled microwire device under varying light intensities[39]. Copyright 2022, Wiley-VCH. (d) Schematic of a multifunctional optoelectronic detector integrating linear and circular polarization detection, along with the grazing-incidence wide-angle X-ray scattering (GIWAXS) pattern of nanowires. (e) Polarization dependence of theoretical absorption corresponding to different Stokes parameters. (f) Comparison of experimental and theoretical values under different polarization states[76]. Copyright 2021, American Chemical Society. (g) SEM image of vertically aligned subwavelength perovskite nanowire arrays. (h) Polar plot of simulated results for vertical perovskite nanowire structures designed to detect 3D light incidence directions. (i) Schematic of spatial light source localization using two angular sensors placed 5 cm apart on the same horizontal plane[70]. Copyright 2025, American Chemical Society

图10. 柔性与可穿戴器件. (a)基于DTT-8一维阵列器件的光学图像、局部放大的扫描电子显微镜图像和有机单晶微米线阵列的GIWAXS图谱. (b)多次弯曲循环测试下的器件迁移率变化. (c)不同光照功率下的电流-时间响应特性. (d)可穿戴紫外线监测手环结构示意. (e)实际适用场景中手环在紫外光照下的响应效果[43]. (f)基于曲线微结构阵列的全可拉伸器件结构示意图与112个全可拉伸器件阵列的光学图像. (g)弯曲P3HT微结构阵列的GIWAXS图谱. (h)与非门在0%和100%应变下的输入-输出特性曲线. (i)可拉伸的与非门在初始状态和沿电荷传输方向水平方向施加100%应变下的光学图像(VA/VB为A/B端输入电压). (j)器件在未拉伸状态和沿电荷传输方向平行/垂直施加100%应变时的转移特性曲线. (k)器件在50%应变下经历1000次拉伸-释放循环的迁移率统计[35]

Figure 10. Flexible and wearable devices. (a) Optical image of the DTT-8 1D array-based device, magnified SEM image, and GIWAXS pattern of organic single-crystal microwire arrays. (b) Mobility variation of the device under multiple bending cycles. (c) Current-time response characteristics under different illumination powers. (d) Schematic of a wearable UV monitoring wristband. (e) UV response performance of the wristband under real-world conditions[43]. Copyright 2024, Wiley-VCH. (f) Schematic and optical image of a fully stretchable device structure based on curved microstructure arrays with a 112-device array. (g) GIWAXS pattern of the bent P3HT microstructure arrays. (h) Input-output characteristics of an AND-NOT gate under 0% and 100% strain. (i) Optical image of the stretchable AND-NOT gate in the initial state and under 100% strain applied horizontally along the charge transport direction (VA/VB are input voltages at terminals A/B). (j) Transfer characteristics of the device in the unstretched state and under 100% strain applied parallel/perpendicular to the charge transport direction. (k) Statistical mobility data after 1000 stretch-release cycles under 50% strain[35]. Copyright 2021, Springer Nature

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液桥限域长程有序组装及其光电应用^★

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液桥限域长程有序组装及其光电应用^★

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