SIOC English
化学学报
高级检索

化学学报 ›› 1989, Vol. 47 ›› Issue (2): 112-120. 上一篇    下一篇

研究论文

用低能电子衍射计算Ni(001)表面化学吸附氧族元素的表面原子层间距

蓝田;徐飞岳   

  1. 成都电讯工程学院微电子技术与电子材料系
  • 发布日期:1989-02-15

The calculation of surface atomic layer distances of chemisorption chalcogen on Ni(001) surface by low-energy-electron diffraction

LAN TIAN;XU FEIYUE   

  • Published:1989-02-15

PDF

888

被引次数

16

用一维能带理论计算了Ni(001)表面化学吸附氧族元素(O、S、Se和Te)的表面原子层间距dx(X表示O、S、Se和Te). 当表面原子层间距dO=0.87±0.005埃, dS=1.29±0.01埃, dSe=1.44±0.01埃和dTe=1.93±0.01埃时, LEED谱计算值与实验结果一致.

关键词: 镍, 化学吸附, 表面化学, 电子衍射, 原子间距, ＶＩＡ族元素

The surface atomic layer distances dX (X = O, S, Se, Te) of chemisorbed chalcogens on Ni(001) surface was calculated by using one-dimensional band theory. The calculated LEED spectra are in very good agreement with the experimental results, when the surface atomic layer distances dO = 0.875 ?0.005, dS = 1.29 ?0.01, ds = 1.44 ?0.01, and dTe = 1.93 ?0.01 ?

Key words: NICKEL, CHEMICAL ADSORPTION, SURFACE CHEMISTRY, ELECTRON DIFFRACTION, INTERATOMIC DISTANCE, GROUP ELEMENT VIA

中图分类号: