化学学报 ›› 2004, Vol. 62 ›› Issue (7): 686-691. 上一篇    下一篇

研究论文

(BEDT-TTF)2C3H5SO3·H2O新晶体的生长、结构与导电性

刘陟1, 于文涛1, 蒋民华1, 张德清2, 朱道本2   

  1. 1. 山东大学晶体材料国家重点实验室, 济南, 250100;
    2. 中国科学院化学研究所, 北京, 100080
  • 投稿日期:2002-11-05 修回日期:2003-12-10 发布日期:2014-02-18
  • 通讯作者: 刘陟,E-mail:liuzhi@icm.sdu.edu.cn;Fax:0531-8574135 E-mail:liuzhi@icm.sdu.edu.cn
  • 基金资助:
    国家重点基础研究规划项目基金(No.G1998061402)、中国科学院化学研究所有机固体开放实验室开放课题资助项目.

Crystal Growth, Structure and Conductivity of the BEDT-TTF-based Charge-Transfer Salt (BEDT-TTF)2C3H5SO3·H2O

LIU Zhi1, YU Wen-Tao1, JIANG Min-Hua1, ZHANG De-Qing2, ZHU Dao-Ben2   

  1. 1. State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100;
    2. Institute of Chemistry, Chinese Academy of Sciences, Beijing 100080
  • Received:2002-11-05 Revised:2003-12-10 Published:2014-02-18

用恒电流电化学结晶法培养了一种新的基于BEDT-TTF的电荷转移盐(BEDT-TTF)2C3H5SO3·H2O [BEDT-TTF=双(亚乙基二硫)四硫富瓦烯,C3H5SO2-=烯丙基磺酸根].通过四圆X射线衍射方法测定了(BEDT-TTF)2C3H5SO33·H2O的结构.晶体属于正交晶系,Pma2空间群;晶胞参数:a=3.2772(3) nm, b=0.79604(7) nm, c=0.66868(7) nm, V=1.7445(3) nm3.在标题化合物晶体中,BEDT-TTF0.5+自由基形成α′-型堆积,烯丙基磺酸根阴离子则通过氢键沿c轴方向连接成链.(BEDT-TTF)2C3H5SO3·H2O的室温电导率为0.0489 Ω-1·m-1,电阻率-温度测定曲线表明它具有典型的半导体导电行为,其导电激活能为0.319 eV.

关键词: BEDT-TTF, 电化学结晶, 晶体结构, 半导体

A new BEDT-TTF-based charge-transfer salt, (BEDT-TTF)2C3H5SO3·H2O (BEDT-TTF=bis(ethylenedithio)tetrathiafulvalene, C3H5SO3-=allylsulfonate), has been prepared by oxidative electro-crystallization at a constant current of 1.5 μA. The single crystal structure was determined by four-circle X-ray diffraction method. The crystal belongs to orthorhombic system, Pma2 space group with the unit cell parameters of a=3.2772(3) nm, b=0.79604(7) nm, c=0.66868(7) nm, V=1.7445(3) nm3. In the crystal of the title compound, the BEDT-TTF cations adopt an α′-type packing pattern and organic counter anions form infinite chains by hydrogen bonds along c-axis. The room-temperature conductivity of the salt is 0.0489 Ω-1·m-1. The resistivity-temperature curve demonstrates that it is a typical semiconductor with an activation of 0.319 eV.

Key words: BEDT-TTF, electrocrystallization, crystal structure, semiconductor