化学学报 ›› 2009, Vol. 67 ›› Issue (12): 1389-1394. 上一篇    下一篇

研究论文

Ce1-xPrxO2-δ (x=0.05~0.30)固溶体的合成及其性质研究

林晓敏*,a,b 闫 石a 朱丽丽a 李莉萍b 苏文辉b,c,d

  

  1. (a北华大学物理学院 吉林 132013)
    (b吉林大学物理学院 长春 130023)
    (c哈尔滨工业大学凝聚态科学与技术中心 哈尔滨 150001)
    (d中国科学院国际材料物理中心 沈阳 110015)

  • 投稿日期:2008-10-19 修回日期:2009-01-13 发布日期:2009-06-28
  • 通讯作者: 林晓敏

Synthesis and Properties of the Solid Solution Ce1-xPrxO2-d (x=0.05~0.30)

Lin, Xiaomin *,a,b Yan, Shi a Zhu, Lili a Li, Liping b Su, Wenhui b,c,d

  

  1. (a College of Physics, Beihua University, Jilin 132013)
    (b College of Physics, Jilin University, Changchun 130023)
    (c Center of Condensed Matter Science and Technology, Harbin Institute of Technology, Harbin 150001)
    (d Center of International Material Physics Reserch, Chinese Academy of Sciences, Shenyang 110015)
  • Received:2008-10-19 Revised:2009-01-13 Published:2009-06-28
  • Contact: Lin, Xiaomin

利用溶胶-凝胶法合成了固溶体Ce1-xPrxO2-δ (x=0.05~0.30). X射线衍射(XRD)分析表明, 在x≤0.30的范围内形成了单相萤石结构固溶体Ce1-xPrxO2-δ; X射线光电子能谱(XPS)结果表明, 样品中氧缺位浓度随掺杂量增大而增大, 铈离子主要为Ce4+离子, 镨离子以混合价态Pr3+和Pr4+存在; 拉曼光谱(Raman)观察到两个峰, 458 cm-1峰为特征F2g振动谱带, 较宽的570 cm-1峰与样品中氧离子缺位有关; 交流阻抗谱测试表明, 固溶体Ce1-xPrxO2-δ的电导率随掺杂量增加而增大, x=0.2时, 电导率达到最大, 活化能较低, σ600 ℃=3.28×10-2 S/cm, σ700 ℃=6.06×10-2 S/cm, Ea=0.54 eV (250~650 ℃), Ea=0.49 eV (650~800 ℃).

关键词: 溶胶-凝胶法, Ce1-xPrxO2-δ, X射线光电子能谱, 拉曼光谱, 电导率

Solid solutions Ce1-xPrxO2-δ (x=0.05~0.30) were synthesized by a sol-gel method. The X-ray diffraction analysis showed that solid solutions Ce1-xPrxO2-δ were crystallized in a single fluorite structure in the range of x≤0.30. XPS analysis suggested that the oxygen vacancy concentration increased with increasing the dopant content x, and the mixed valence Pr3+/Pr4+ ions and major Ce4+ ions existed in the solid solutions. The Raman spectra exhibited two peaks. The 458 cm-1 peak was attributed to Raman active F2g mode that was assigned to a symmetric breathing mode of oxygen atoms around cerium ions. The broad 570 cm-1 peak was attributed to oxygen vacancies. Impedance spectra showed conductivity values of Ce1-xPrxO2-δ (x=0.05~0.30) which were increased with the dopant content x and reached the maximum at x=0.20, and the relatively low activation energy data, σ600 ℃=3.28×10-2 S•cm-1, σ700 ℃=6.06×10-2 S•cm-1, Ea=0.54 eV (250~650 ℃), and Ea=0.49 eV (650~800 ℃).

Key words: sol-gel method, Ce1-xPrxO2-δ, X-ray photoelectron spectroscopy, Raman spectrum, conductivity

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