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化学学报
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化学学报 ›› 1993, Vol. 51 ›› Issue (5): 432-437. 上一篇    下一篇

研究论文

镍、铅、LB膜对n-Si光电极的修饰

邓薰南;印建华;范钦柏;沈增德;梁培辉;张伟清   

  1. 上海科学技术大学电化学研究室;中国科学院上海光学精密机械研究所
  • 发布日期:1993-05-15

The modification of Ni, Pb and LB films on the behavior of n-Si photoelectrode

DENG XUNNAN;YIN JIANHUA;FAN QINBAI;SHEN ZENGDE;LIANG PEIHUI;ZHANG WEI1ING   

  • Published:1993-05-15

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373

本文研究了金属(镍、铅)与Langmuir-Blodgett膜对n-Si电极光电化学行为的影响, 观察到镍与铅能增强该电极的能量转换效率与稳定性。测定和讨论了八种有机物得的LB膜对n-Si/Ni电极的修饰作用, 最佳的长链香豆素LB膜使其效率倍增。还研究了具有MIS器件结构的Si/LB/Al电极的光电化学行为, 发现它具有良好的光电效应。

关键词: 电极, 硅, 镍, 铅, 化学修饰电极, 光电化学, Ｌ-Ｂ膜

The effects of metal (Ni or Pb) and Langmuir-Blodgett (LB) films on the photoelectrochem. behavior of n-Si were studied. Ni and Pb can improve the energy conversion efficiency and the stability of n-Si. The modification of n-Si/Ni by LB films prepared with eight different organic compounds was determine and discussed; the efficiency of the photoelectrode was doubled by the best compound (long-chain coumarin LB film). The photoelectrochem. properties of Si/LB/Al electrode having the MIS structure were also studied.

Key words: ELECTRODE, SILICON, NICKEL, LEAD, CHEMICAL MODIFIED ELECTRODE, PHOTO-ELECTROCHEMISTRY, L-B MEMBRANE

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