芯片制造中的化学镀技术研究进展
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叶淳懿, 深圳大学材料学院材料与化工专业在读硕士研究生, 研究方向为面向电子与能源领域应用的化学镀技术及其活化剂. |
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符显珠, 深圳大学材料学院教授, 博士生导师, 从事电化学能源材料与器件及电子材料与制程研究. 2007年厦门大学化学系博士毕业, 2008~2012年在加拿大阿尔伯塔大学做博士后并到美国伯克利国家实验室进行访问研究, 曾于中国科学院深圳先进技术研究院工作. 近5年以通讯作者在Nature Catalysis、Journal of the American Chemical Society、Angewandte Chemie、Energy & Environmental Science、Science Bulletin(科学通报)等期刊发表SCI论文100多篇. |
收稿日期: 2022-08-06
网络出版日期: 2022-09-16
基金资助
国家自然科学基金(21975163)
Research Progress of Electroless Plating Technology in Chip Manufacturing
Received date: 2022-08-06
Online published: 2022-09-16
Supported by
National Natural Science Foundation of China(21975163)
芯片制造中大量使用物理气相沉积、化学气相沉积、电镀、热压键合等技术来实现芯片导电互连. 与这些技术相比, 化学镀因具有均镀保形能力强、工艺条件温和、设备成本低、操作简单等优点, 被人们期望应用于芯片制造中, 从而在近年来得到大量的研究. 本综述首先简介了芯片制造中导电互连包括芯片内互连、芯片3D封装硅通孔(TSV)、重布线层、凸点、键合、封装载板孔金属化等制程中传统制造技术与化学镀技术的对比, 说明了化学镀用于芯片制造中的优势; 然后总结了芯片化学镀的原理与种类、接枝与活化前处理方法和关键材料; 并详细介绍了芯片内互连和TSV互连化学镀阻挡层、种子层、互连孔填充、化学镀凸点、再布线层、封装载板孔互连种子层以及凸点间键合的研究进展; 且讨论了化学镀液组成及作用, 超级化学镀填孔添加剂及机理等. 最后对化学镀技术未来应用于新一代芯片制造中进行了展望.
叶淳懿 , 邬学贤 , 张志彬 , 丁萍 , 骆静利 , 符显珠 . 芯片制造中的化学镀技术研究进展[J]. 化学学报, 2022 , 80(12) : 1643 -1663 . DOI: 10.6023/A22080347
As an indispensable part of today's society, the research on the manufacturing and packaging process of chips is particularly important. In the conventional chip manufacturing and packaging process, physical vapor deposition, chemical vapor deposition, electroplating, hot pressing and other processes are widely used. These processes are not only complicated and expensive, but also have some disadvantages that hinder the development of chip technology. The electroless deposition process has the advantages of mild conditions, low equipment cost, simple steps, and strong conformal ability. Researchers have paid attention to and studied its application in the field of chip manufacturing and packaging. Firstly, the principle and types of chip electroless deposition, activation, pre-grafting treatment methods and key materials were introduced in this paper. Secondly, to illustrate the advantages of electroless deposition in chip manufacturing, the main process of conductive interconnection in chip manufacturing were introduced, the conventional manufacturing process and electroless deposition manufacturing process in the interconnection process in chip, 3D packaging through silicon via (TSV) process, redistribution layer, bump, and bonding process were compared. Thirdly, the research progress of electroless deposition using in in-chip including barrier layer, seed layer, gap filling, substrate, bump is summarized and discussed; the composition and function of the plating solution, mechanism of additives in super electroless deposition gap filling are also discussed. Finally, the future application of electroless plating technology in the new generation of chip manufacturing is prospected.
| [1] | Chen, Y.-J.; Du, Z.-D.; Guo, Q.; Li, W.; Tan, Y.-J. Bull. Chin. Acad. Sci. 2022, 37, 15. (in Chinese) |
| [1] | ( 陈云霁, 杜子东, 郭崎, 李威, 谭懿峻, 中国科学院院刊, 2022, 37, 15.) |
| [2] | Bernasconi, R.; Magagnin, L. J. Electrochem. Soc. 2018, 166, D3219. |
| [3] | Jing, X.; Tan, J.; Liu, J. In 2015 China Semiconductor Technology International Conference, IEEE, Shanghai, 2015, p. 1. |
| [4] | Zhu, J.; Zhuo, H.-J.; Zhu, L.-Q. China Surf. Eng. 2022, http://kns.cnki.net.ezproxy.lib.szu.edu.cn/kcms/detail/11.3905.TG.20220810.1809.030.html. (in Chinese) |
| [4] | ( 朱晶, 卓鸿俊, 朱立群, 中国表面工程, 2022.) |
| [5] | Zhou, M.-M.; Zhang, Y.; Shen, X.-X.; Xu, Q.-J. Electroplat. Finish. 2021, 40, 358. (in Chinese) |
| [5] | ( 周苗淼, 张雨, 沈喜训, 徐群杰, 电镀与涂饰, 2021, 40, 358.) |
| [6] | Huang, H.-J.; Zhao, D.-S.; Gong, Y.-F.; Zhang, X.-D.; Shi, W.-H.; Zhang, B.-S. Prog. Solid State Electronics 2021, 41, 81. (in Chinese) |
| [6] | ( 黄宏娟, 赵德胜, 龚亚飞, 张晓东, 时文华, 张宝顺, 固体电子学研究与进展, 2021, 41, 81.) |
| [7] | Hung, H. T.; Ma, Z. D.; Shih, P. S.; Huang, J. H.; Kao, L. Y.; Yang, C. Y.; Renganathan, V.; Kao, C. L.; Hung, Y. C.; Kao, C. R. Electrochim. Acta 2021, 376, 138032. |
| [8] | Wang, Y.-F.; Hong, Y.; Ji, L.-X.; Zhang, C.; Ma, Z.-W. J. Univ. Electron. Sci. Technol. China 2022, https://kns-cnki-net.ezproxy.lib.szu.edu.cn/kcms/detail/detail.aspx?FileName=DKDX20220523000&DbName=CAPJ2022. (in Chinese) |
| [8] | ( 王跃峰, 洪延, 冀林仙, 张存, 马紫微, 电子科技大学学报, 2022.) |
| [9] | Xie, J.-Q.; Ji, Y.-Q.; Mao, D.-S.; Zhang, F.-T.; Fu, X.-Z.; Sun, R.; Wong, C.-P. ACS Appl. Nano Mater. 2018, 1, 1531. |
| [10] | Zhang, F. T.; Xu, L.; Chen, J. H.; Zhao, B.; Fu, X. Z.; Sun, R.; Chen, Q.; Wong, C. P. ACS Appl Mater Interfaces 2018, 10, 2075. |
| [11] | Zhang, F. T.; Xu, L.; Chen, J. H.; Xie, J. Q.; Fu, X. Z.; Chen, Q.; Sun, R.; Wong, C. P. ChemistrySelect 2018, 3, 7612. |
| [12] | Li, P.; Zhang, Y.; Zheng, Z. Adv. Mater. 2019, 31, e1902987. |
| [13] | Wang, D.; Sun, J.; Xue, Q.; Li, Q.; Guo, Y.; Zhao, Y.; Chen, Z.; Huang, Z.; Yang, Q.; Liang, G.; Dong, B.; Zhi, C. Energy Storage Mater. 2021, 36, 272. |
| [14] | Cheng, S.-Y.; Cheng, P.; Xiao, K.; Feng, Z.-S. Electr. Sci. Technol. 2021, 34, 73. (in Chinese) |
| [14] | 程思元, 程攀, 肖宽, 冯哲圣, |
| [15] | Xie, J.-Q.; Ji, Y.-Q.; Kang, J.-H.; Sheng, J.-L.; Mao, D.-S.; Fu, X.-Z.; Sun, R.; Wong, C.-P. Energy Environ. Sci. 2019, 12, 194. |
| [16] | Lin, Y.; Chen, J.; Tavakoli, M. M.; Gao, Y.; Zhu, Y.; Zhang, D.; Kam, M.; He, Z.; Fan, Z. Adv. Mater. 2019, 31, e1804285. |
| [17] | Xiong, L.; Li, X.; Wang, T.; Xu, K. Surf. Technol. 2020, 49, 180. |
| [18] | Gebrael, T.; Li, J.; Gamboa, A. R.; Ma, J.; Schaadt, J.; Horowitz, L.; Pilawa-Podgurski, R.; Miljkovic, N. Nat. Electron. 2022, 5, 394. |
| [19] | Wang, Q.; Sun, Y.-X.; Zhang, B. Printed Circ. Inform. 2022, 30, 24. (in Chinese) |
| [19] | ( 王群, 孙宇曦, 张波, 印制电路信息, 2022, 30, 24.) |
| [20] | Ghosh, S. Thin Solid Films 2019, 669, 641. |
| [21] | Zheng, A.-N.; Jin, L.; Yang, J.-Q.; Li, W.-Q.; Wang, Z.-Y.; Yang, F.-Z.; Zhan, D.-P.; Tian, Z.-Q. Acta Chim. Sinica 2022, 80, 659. (in Chinese) |
| [21] | ( 郑安妮, 金磊, 杨家强, 李威青, 王赵云, 杨防祖, 詹东平, 田中群, 化学学报 2022, 80, 659.) |
| [22] | Chen, S.-T.; Chung, Y.-C.; Fang, J.-S.; Cheng, Y.-L.; Chen, G.-S. Appl. Surf. Sci. 2017, 405, 350. |
| [23] | Bernasconi, R.; Molazemhosseini, A.; Cervati, M.; Armini, S.; Magagnin, L. J. Electron. Mater. 2016, 45, 5449. |
| [24] | Malki, M.; Rozenblat-Raz, A.; Duhin, A.; Inberg, A.; Horvitz, D.; Shacham-Diamand, Y. Surf. Coat. Technol. 2014, 252, 1. |
| [25] | Wu, P.-H.; Lai, Y.-Z.; Zhang, Y.-P.; Sil, M. C.; Lee, P.-H. H.; Wei, T.-C.; Chen, C.-M. ACS Appl. Nano Mater. 2020, 3, 3741. |
| [26] | Inoue, F.; Shimizu, T.; Miyake, H.; Arima, R.; Ito, T.; Seki, H.; Shinozaki, Y.; Yamamoto, T.; Shingubara, S. Electrochim. Acta 2012, 82, 372. |
| [27] | Inoue, F.; Shimizu, T.; Yokoyama, T.; Miyake, H.; Kondo, K.; Saito, T.; Hayashi, T.; Tanaka, S.; Terui, T.; Shingubara, S. Electrochim. Acta 2011, 56, 6245. |
| [28] | Osaka, T.; Takano, N.; Kurokawa, T.; Ueno, K. Electrochem. Solid-State Lett. 2001, 5, C7. |
| [29] | Chen, S.-T.; Cheng, Y.-S.; Chang, Y.-H.; Yang, T.-M.; Lee, J.-T.; Chen, G.-S. Appl. Surf. Sci. 2018, 440, 209. |
| [30] | Chen, G.-S.; Gao, W.-L.; Chang, C.-C.; Fang, J.-S.; Cheng, Y.-L. Mater. Chem. Phys. 2021, 259, 124034. |
| [31] | Guo, Y.; Xu, Y.-T.; Gao, G.-H.; Wang, T.; Zhao, B.; Fu, X.-Z.; Sun, R.; Wong, C.-P. Catal. Commun. 2015, 58, 40. |
| [32] | Ye, H. Q.; Mao, D. S.; Yuen, M. M. F.; Fu, X. Z.; Sun, R.; Wong, C. P. In 2017 18th International Conference on Electronic Packaging Technology (ICEPT), IEEE, 2017, p. 835. |
| [33] | Sheng, G. Q.; Chen, J. H.; Zhang, F. T.; Yuen, M. M. F.; Fu, X. Z.; Sun, R.; Wong, C. P. In 2017 18th International Conference on Electronic Packaging Technology (ICEPT), IEEE, 2017, p. 824. |
| [34] | Sheng, J. L.; Kang, J. H.; Fu, X. Z.; Sun, R.; Wong, C. P. In 2017 18th International Conference on Electronic Packaging Technology (ICEPT), IEEE, 2017, p. 862. |
| [35] | Zhang, F.-T.; Xu, L.; Chen, J.-H.; Zhao, B.; Fu, X.-Z.; Sun, R.; Chen, Q.; Wong, C.-P. ACS Appl. Mater. Interfaces 2018, 10, 2075. |
| [36] | Koo, H.-C.; Kim, S. Y.; Cho, S. K.; Kim, J. J. J. Electrochem. Soc. 2008, 155, D558. |
| [37] | Lee, C. H.; Hwang, S.; Kim, S.-C.; Kim, J. J. Electrochem. Solid-State Lett. 2006, 9, C157. |
| [38] | Liu, Z.-C.; He, Q.-G.; Tang, J.-X.; Xiao, P.-F.; He, N.-Y.; Lu, Z.-H. Chin. J. Chem. 2010, 21, 1. |
| [39] | Ikeda, A.; Sakamoto, A.; Hattori, R.; Kuroki, Y. Thin Solid Films 2009, 517, 1740. |
| [40] | Inoue, F.; Shimizu, T.; Miyake, H.; Arima, R.; Ito, T.; Seki, H.; Shinozaki, Y.; Yamamoto, T.; Shingubara, S. Microelectron. Eng. 2013, 106, 164. |
| [41] | Shingubara, S.; Inoue, F.; Yokoyama, T.; Miyake, H.; Shimizu, T.; Terui, T.; Tanaka, S.; Kondo, K. ECS Trans. 2011, 33, 23. |
| [42] | Shingubara, S.; Wang, Z.; Yaegashi, O.; Obata, R.; Sakaue, H.; Takahagi, T.; In IEEE International Electron Devices Meeting 2003, IEEE, Washington, 2003, p. 6.3.1. |
| [43] | Lim, T.; Kim, K. H.; Kim, K.; Lee, H.; Kim, H.-J.; Lee, H.-N.; Kim, J. J.; Kwon, O. J. J. Electrochem. Soc. 2014, 161, D453. |
| [44] | Lin, K.-L.; Liu, Y.-C IEEE Trans. Adv. Packag. 1999, 22, 575. |
| [45] | Inoue, F.; Philipsen, H.; Radisic, A.; Armini, S.; Civale, Y.; Leunissen, P.; Kondo, M.; Webb, E.; Shingubara, S. Electrochim. Acta 2013, 100, 203. |
| [46] | Osaka, T.; Aramaki, H.; Yoshino, M.; Ueno, K.; Matsuda, I.; Shacham-Diamand, Y. J. Electrochem. Soc. 2009, 156, H707. |
| [47] | Wang, Z.-L.; Liu, Z.-J.; Jiang, H.-Y.; Wang, X.-W.; Shoso, S. J. Electrochem. 2006, 12, 125. |
| [48] | Li, Y.-Q.; Ma, X.-C.; Zhang, J.-Q.; Yang, P.-X.; An, M.-Z. Surf. Technol. 2021, 50, 24. (in Chinese) |
| [48] | ( 李亚强, 马晓川, 张锦秋, 杨培霞, 安茂忠, 表面技术, 2021, 50, 24.) |
| [49] | Jin, L.; Yang, J.-Q.; Yang, F.-Z.; Zhan, D.-P.; Tian, Z.-Q.; Zhou, S.-M. J. Electrochem. 2020, 26, 521. (in Chinese) |
| [49] | ( 金磊, 杨家强, 杨防祖, 詹东平, 田中群, 周绍民, 电化学, 2020, 26, 521.) |
| [50] | Li, Z.; Tian, Y.; Teng, C.; Cao, H. Materials (Basel). 2020, 13, 5049. |
| [51] | Olmen, J. V.; Huyghebaert, C.; Coenen, J.; Aelst, J. V.; Sleeckx, E.; Ammel, A. V.; Armini, S.; Katti, G.; Vaes, J.; Dehaene, W.; Beyne, E.; Travaly, Y. Microelectron. Eng. 2011, 88, 745. |
| [52] | Armini, S.; El-Mekki, Z.; Vandersmissen, K.; Philipsen, H.; Rodet, S.; Honore, M.; Radisic, A.; Civale, Y.; Beyne, E.; Leunissen, L. J. Electrochem. Soc. 2011, 158, H160. |
| [53] | Inoue, F.; Philipsen, H.; Radisic, A.; Armini, S.; Leunissen, P.; Miyake, H.; Arima, R.; Shimizu, T.; Ito, T.; Seki, H.; Shinozaki, Y.; Yamamoto, Y.; Shingubara, S. In 2011 IEEE International 3D Systems Integration Conference (3DIC), IEEE, Osaka, 2012, p. 1. |
| [54] | Inoue, F.; Shimizu, T.; Arima, R.; Miyake, H.; Shingubara, S.. In 2012 IEEE International Meeting for Future of Electron Devices, Kansai, IEEE, Suita, 2012, p. 1. |
| [55] | Yeoh, K. H.; Salazar, C.; Thalmann, R.; Bieck, F.; Teutsch, T. In 2019 IEEE 21st Electronics Packaging Technology Conference (EPTC), IEEE, Singapore, 2019, p. 360. |
| [56] | Cai, Z.; Ding, Y.; Wu, Z.; Zhang, Z.; Su, Y.; Chen, Z. In 2021 IEEE International Interconnect Technology Conference (IITC), IEEE, Kyoto, 2021, p. 1. |
| [57] | Gupta, A.; Snyder, E.; Gottschalk, C.; Wenzel, K.; Gunn, J.; Lu, H.; Suzuki, Y.; Sundaram, V.; Tummala, R. In 2017 IEEE 67th Electronic Components and Technology Conference (ECTC), IEEE, Orlando, 2017, p. 609. |
| [58] | Yokoshima, T.; Nomura, K.; Yamaji, Y.; Kikuchi, K.; Nakagawa, H.; Koshiji, K.; Aoyagi, M.; Iwai, R.; Tokuhisa, T.; Kato, M. Trans. Jpn. Inst. Electron. Packag. 2009, 2, 109. |
| [59] | Kim, Y. H.; Kim, M.; Kotsugi, Y.; Cheon, T.; Mohapatra, D.; Jang, Y.; Bae, J. S.; Hong, T. E.; Ramesh, R.; An, K. S.; Kim, S.-H. Adv. Funct. Mater. 2022, https://doi.org/10.1002/adfm.202206667. |
| [60] | Song, D.-Y.; Zong, X.-P.; Sun, R.-X.; Wang, Y.-Q. Semicon. Technol. 2001, 29. (in Chinese) |
| [60] | ( 宋登元, 宗晓萍, 孙荣霞, 王永青, 半导体技术 2001, 29.) |
| [61] | Liu, M.-X. M.S. Thesis, Yunnan University, Kunming, 2016. (in Chinese) |
| [61] | ( 刘雪梅, 硕士论文, 云南大学, 昆明, 2016.) |
| [62] | Fang, J.-L. Acta Chim. Sinica 1983, 129. (in Chinese) |
| [62] | ( 方景礼, 化学学报 1983, 129.) |
| [63] | Jia, W.; Xuan, T.-P. Rare Metals Lett. 2007, 1. (in Chinese) |
| [63] | ( 贾韦, 宣天鹏, 稀有金属快报, 2007, 1.) |
| [64] | Inoue, F.; Yokoyama, T.; Miyake, H.; Tanaka, S.; Yamamoto, K.; Shingubara, S. In 2010 IEEE International Interconnect Technology Conference, IEEE, Burlingame, 2010, p. 1. |
| [65] | Inoue, F.; Yokoyama, T.; Tanaka, S.; Yamamoto, K.; Koyanagi, M.; Fukushima, T.; Wang, Z.; Shingubara, S. In 2009 IEEE International Interconnect Technology Conference, IEEE, Sapporo, 2009, p. 167. |
| [66] | Zhang, J.; Ling, H.; Yan, Y.; Li, M. In 2014 15th International Conference on Electronic Packaging Technology, IEEE, Chengdu, 2014, p. 320. |
| [67] | Xiong, M.; Chen, Z.; Ding, Y.; Kino, H.; Fukushima, T.; Tanaka, T. IEEE Electron Device Lett. 2019, 40, 95. |
| [68] | Hu, Y.; Xiong, L.; Hang, T.; Li, M. Thin Solid Films 2021, 734. |
| [69] | Cai, J.; Feng, G.; Yang, Z.; Wang, S.; Jia, S. In 2006 International Conference on Electronic Materials and Packaging, IEEE, Hong Kong, 2006, p. 1. |
| [70] | Lee, K. W.; Nagai, C.; Nakamura, A.; Bea, J. C.; Murugesan, M.; Fukushima, T.; Tanaka, T.; Koyanagi, M. In 2014 International 3D Systems Integration Conference (3DIC), IEEE, Kinsdale, 2014, p. 1. |
| [71] | Yoshino, M.; Nonaka, Y.; Sasano, J.; Matsuda, I.; Shacham-Diamand, Y.; Osaka, T. Electrochim. Acta 2005, 51, 916. |
| [72] | Chen, K.; Liu, C.; Whalley, D. C.; Hutt, D. A.; Li, J. F.; Mannan, S. H. In 2006 1st Electronic Systemintegration Technology Conference, IEEE, Dresden, 2006, p. 421. |
| [73] | Miyake, H.; Inoue, F.; Yokoyama, T.; Shimizu, T.; Tanaka, S.; Terui, T.; Shingubara, S. Jpn. J. Appl. Phys. 2011, 50, 5S1. |
| [74] | Inoue, F.; Yokoyama, T.; Miyake, H.; Tanaka, S.; Terui, T.; Shimizu, T.; Shingubara, S. In 2010 IEEE International 3D Systems Integration Conference (3DIC), IEEE, Munich, 2010, p. 1. |
| [75] | Arima, R.; Inoue, F.; Yokoyama, T.; Miyake, H.; Shimizu, T.; Shingubara, S.; Tanaka, S.; Terui, T. In 2011 International Meeting for Future of Electron Devices, IEEE, Osaka, 2011, p. 66. |
| [76] | Matsudaira, T.; Shindo, S.; Shimizu, T.; Ito, T.; Shinguhara, S.; Shimizu, S. In 2019 International 3D Systems Integration Conference (3DIC), IEEE, Sendai, 2019, p. 1. |
| [77] | Iseri, T.; Shindo, S.; Shimizu, T.; Ito, T.; Matsumoto, M.; Shingubara, S. In 2018 International Conference on Electronics Packaging and iMAPS All Asia Conference (ICEP-IAAC), IEEE, Mie, 2018, p. 485. |
| [78] | Tanaka, T.; Iwashita, M.; Toshima, T.; Fujita, K.; Chen, J. In 2015 IEEE 65th Electronic Components and Technology Conference (ECTC), IEEE, San Diego, 2015, p. 78. |
| [79] | Sandjaja, M.; Stolle, T.; Bund, A.; Lang, K. D. IEEE Trans. Electron Devices. 2016, 63, 3199. |
| [80] | Shacham-Diamand, Y.; Zylberman, A.; Petrov, N.; Sverdlov, Y. Microelectron. Eng. 2002, 64, 315. |
| [81] | Chen, S.-T.; Liu, Y.-Y.; Chen, G.-S. Appl. Surf. Sci. 2015, 354, 144. |
| [82] | Decorps, T.; Haumesser, P. H.; Olivier, S.; Roule, A.; Joulaud, M.; Pollet, O.; Avale, X.; Passemard, G. Microelectron. Eng. 2006, 83, 2082. |
| [83] | Abdel Aal, A.; Barakat, H.; Abdel Hamid, Z. Surf. Coat. Technol. 2008, 202, 4591. |
| [84] | Nakano, H.; Itabashi, T.; Akahoshi, H. J. Electrochem. Soc. 2005, 152, C163. |
| [85] | Itabashi, T.; Nakano, H.; Akahoshi, H. In Proceedings of the IEEE 2002 International Interconnect Technology Conference (Cat. No.02EX519), IEEE, Burlingame, 2002, p. 285. |
| [86] | Almog, R. O.; Sverdlov, Y.; Goldfarb, I.; Shacham-Diamand, Y. Microelectron. Eng. 2007, 84, 2450. |
| [87] | Pan, H.-C.; Hsieh, T.-E. J. Electron. Mater. 2011, 40, 330. |
| [88] | Pan, H.-C.; Hsieh, T.-E. MRS Proceedings. 2009, 1156, 1156. |
| [89] | Yu, L.; Vashaei, Z.; Ernst, F.; Akolkar, R. J. Electrochem. Soc. 2016, 163, D374. |
| [90] | Ru, J.-H.; Yu, L.-S.; Fan, J.-L.; Meng, J.-C.; Chen, L.-F.; Wu, G.-W. Nonferr. Metals Sci. Eng. 2022, http://kns.cnki.net.ezproxy.lib. szu.edu.cn/kcms/detail/36.1311.tf.20220817.1654.002.html. (in Chinese) |
| [90] | ( 卢建红, 余柳丝, 范金龙, 孟俊臣, 陈立峰, 吴光伟, 有色金属科学与工程, 2022, |
| [91] | Yan, H.; Guan, Y.-Z. Electroplat. Finish. 2022, 41, 791. (in Chinese) |
| [91] | ( 鄢豪, 管英柱, 电镀与涂饰 2022, 41, 791.) |
| [92] | Shacham-Diamand, Y. Y. Electrochem. Solid-State Lett. 1999, 3, 279. |
| [93] | Jiang, Z.-J.; Wu, D.-X.; Xiao, Z.-L.; Li, X.; Liang, A.-B.; Zhou, G.-H.; Huang, Y. Surf. Technol. 2021, 50, 293. (in Chinese) |
| [93] | ( 蒋峥瑾, 吴道新, 肖忠良, 李昕, 梁奥博, 周光华, 黄勇, 表面技术 2021, 50, 293.) |
| [94] | Zheng, A.-N.; Jin, L.; Yang, J.-Q.; Wang, Z.-Y.; Li, W.-Q.; Yang, F.-Z.; Zhan, D.-P.; Tian, Z.-Q. Chem. J. Chinese Univ. 2022, 43, 147. (in Chinese) |
| [94] | ( 郑安妮, 金磊, 杨家强, 王赵云, 李威青, 杨防祖, 詹东平, 田中群, 高等学校化学学报, 2022, 43, 147.) |
| [95] | Lee, H.-K.; Hur, J.-Y. Met. Mater. Int. 2013, 19, 821. |
| [96] | Seo, S.; Yoo, B. J. Nanosci. Nanotechnol. 2016, 16, 11267. |
| [97] | Inoue, F.; Philipsen, H.; van der Veen, M. H.; Huylenbroeck, S. V.; Armini, S.; Struyf, H.; Tanaka, T. J. Electrochem. Soc. 2014, 161, D768. |
| [98] | Inoue, F.; Philipsen, H.; Veen, M. H. v. d.; Vandersmissen, K.; Huylenbroeck, S. V.; Struyf, H.; Tanaka, T. In 2014 International 3D Systems Integration Conference (3DIC), IEEE, Kinsdale, 2014, p. 1. |
| [99] | Inoue, F.; Philipsen, H.; van der Veen, M. H.; Van Huylenbroeck, S.; Armini, S.; Struyf, H.; Tanaka, T. ECS J. Solid State Sci. Technol. 2014, 4, N3108. |
| [100] | Inoue, F.; Yokoyama, T.; Tanaka, S.; Yamamoto, K.; Shingubara, S. ECS Trans. 2010, 25, 31. |
| [101] | Wang, Z.; Ida, T.; Sakaue, H.; Shingubara, S.; Takahagi, T. Electrochem. Solid-State Lett. 2003, 6, C38. |
| [102] | Lim, T.; Koo, H.-C.; Park, K. J.; Kim, M. J.; Kim, S.-K.; Kim, J. J. J. Electrochem. Soc. 2012, 159, D142. |
| [103] | Chen, G.-S.; Wu, D.-Y.; Chen, S.-T.; Cheng, Y.-L.; Fang, J.-S.; Yang, T.-M. J. Electrochem. Soc. 2016, 163, D463. |
| [104] | Yu, L.; Akolkar, R. J. Electrochem. Soc. 2016, 163, D247. |
| [105] | Inoue, F.; Philipsen, H.; Veen, M. H. v. d.; Huylenbroeck, S. V.; Armini, S.; Struyf, H.; Tanaka, T. In IEEE International Interconnect Technology Conference, IEEE, San Jose, 2014, p. 207. |
| [106] | Vandersmissen, K.; Inoue, F.; Velenis, D.; Li, Y.; Dictus, D.; Frees, B.; Huylenbroeck, S. V.; Kondo, M.; Seino, T.; Heylen, N.; Struyf, H.; Veen, M. H. In 2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM), IEEE, Grenoble, 2015, p. 197. |
| [107] | Ho, S. W.; Pa, M. E. P.; Daniel, F. M.; Lee, W. S.; Chong, S. C.; Kim, H. J.; Damaruganath, P.; Shan, G. In 2011 IEEE 13th Electronics Packaging Technology Conference, IEEE, Singapore, 2011, p. 417. |
| [108] | Zhang, Z.; Ding, Y.; Xiao, L.; Cai, Z.; Yang, B.; Chen, Z.; Xie, H. IEEE Electron Device Lett. 2021, 42, 1520. |
| [109] | Xiao, L.; Ding, Y.; Su, Y.; Zhang, Z.; Yan, Y.; Chen, Z.; Xie, H. IEEE Electron Device Lett. 2022, 43, 426. |
| [110] | Kim, L.; Kologe, J.; Bowerman, B.; Feng, K.; Bellemare, R. PCB007 China Online Magazine 2020, 11, 37. (in Chinese) |
| [110] | ( Kim, L., Kologe, J., Bowerman, B., Feng, K., Bellemare, R. PCB007中国线上杂志, 2020, 11, 37.) |
| [111] | Hakiri, Y.; Yoshida, K.; Li, S.; Kondoh, M.; Hayashi, S. In 2014 9th International Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT), IEEE, Taipei, 2014, p. 166. |
| [112] | Chao, S.-H.; Weng, C.-F. In 2016 International Conference on Electronics Packaging (ICEP), IEEE, Hokkaido, 2016, p. 341. |
| [113] | Beyer, A.; Gregoriades, L. J.; Kempa, S.; Lehmann, J.; Welz, Y. In 2020 15th International Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT), IEEE, Taipei, 2020, p. 185. |
| [114] | Wu, Y.-C.; Mao, Z.-J.; Wang, C.; Liu, Y.-W.; Chen, S.-L.; Cai, W.-B. Sci. Sinica Chim. 2021, 1474. (in Chinese) |
| [114] | ( 吴依彩, 毛子杰, 王翀, 刘欲文, 陈胜利, 蔡文斌, 中国科学:化学, 2021, 1474.) |
| [115] | Zhang, H.-L.; Tian, H.-Q.; Wang, J.; Lu, X.-B.; Zan, L.-X.; Wang, Z.-L. Electroplat. Finish. 2021, 40, 1341. (in Chinese) |
| [115] | ( 张红玲, 田欢庆, 王娟, 路旭斌, 昝灵兴, 王增林, 电镀与涂饰, 2021, 40, 1341.) |
| [116] | Wang, Z.; Yaegashi, O.; Sakaue, H.; Takahagi, T.; Shingubara, S. J. Electrochem. Soc. 2004, 151, C781. |
| [117] | Shingubara, S.; Wang, Z.; Yaegashi, O.; Obata, R.; Sakaue, H.; Takahagi, T. Electrochem. Solid-State Lett. 2004, 7, C78. |
| [118] | Yang, Z.-F.; Gao, Y.-L.; Li, N.; Wang, X.; Yin, L.; Wang, Z.-L. Acta Chim. Sinica 2009, 67, 2798. (in Chinese) |
| [118] | ( 杨志锋, 高彦磊, 李娜, 王旭, 殷列, 王增林, 化学学报 2009, 67, 2798.) |
| [119] | Yang, Z.; Wang, Z.; Wang, X.; Wang, Z. Chin. J. Chem. 2011, 29, 422. |
| [120] | Wang, Z.; Obata, R.; Sakaue, H.; Takahagi, T.; Shingubara, S. Electrochim. Acta 2006, 51, 2442. |
| [121] | Yang, Z.; Li, N.; Wang, X.; Wang, Z.; Wang, Z. Electrochem. Solid-State Lett. 2010, 13, D47. |
| [122] | Wang, X.; Yang, Z.; Wang, Z. Russ. J. Electrochem. 2012, 48, 99. |
| [123] | Lee, C. H.; Lee, S. C.; Kim, J. J. Electrochim. Acta 2005, 50, 3563. |
| [124] | Lee, C. H.; Cho, S. K.; Kim, J. J. Electrochem. Solid-State Lett. 2005, 8, J27. |
| [125] | Lee, C. H.; Kim, A. R.; Koo, H.-C.; Kim, J. J. J. Electrochem. Soc. 2009, 156, D207. |
| [126] | Hasegawa, M.; Okinaka, Y.; Shacham-Diamand, Y.; Osaka, T. Electrochem. Solid-State Lett. 2006, 9, C138. |
| [127] | Wang, X.; Yang, Z.; Li, N.; Liu, Z.; Yang, Z.; Wang, Z. J. Electrochem. Soc. 2010, 157, D546. |
| [128] | Yang, Z.; Wang, X.; Li, N.; Wang, Z.; Wang, Z. Electrochim. Acta 2011, 56, 3317. |
| [129] | Zan, L.; Liu, Z.; Yang, Z.; Wang, Z. Electrochem. Solid-State Lett. 2011, 14, D107. |
| [130] | Wang, X.; Shen, Q.; Shu, Z. Int. J. Electrochem. Sci. 2013, 8, 4670. |
| [131] | Wang, X. Russ. J. Electrochem. 2014, 50, 438. |
| [132] | Lee, C. H.; Lee, S. C.; Kim, J. J. Electrochem. Solid-State Lett. 2005, 8, C110. |
| [133] | Chen, G.-S.; Lee, C.-E.; Yang, T.-M.; Cheng, Y.-L.; Fang, J.-S. Mater. Lett. 2021, 304, 130718. |
| [134] | Chen, G.-S.; Yang, T.-M.; Chen, S.-T.; Cheng, Y.-L.; Fang, J.-S. Electrochem. Commun. 2018, 87, 9. |
| [135] | Shen, Y.; Li, B.-B.; Ma, Y.; Wang, Z.-L. Electrochemistry 2022, DOI:10.13208/j.electrochem.2213002. (in Chinese) |
| [135] | ( 沈钰, 李冰冰, 马艺, 王增林, 电化学, 2022, DOI:10.13208/j.electrochem. 2213002.) |
| [136] | Wei, L.-J.; Zhou, Z.-H.; Wu, W.-W.; Li, M.; Wang, S. J. Electrochem. 2022, 28, 22. (in Chinese) |
| [136] | ( 魏丽君, 周紫晗, 吴蕴雯, 李明, 王溯, 电化学 2022, 28, 22.) |
| [137] | Veen, M. H. v. d.; Vandersmissen, K.; Dictus, D.; Demuynck, S.; Liu, R.; Bin, X.; Nalla, P.; Lesniewska, A.; Hall, L.; Croes, K.; Zhao, L.; B?mmels, J.; Kolics, A.; T?kei, z. In 2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM), IEEE, Grenoble, 2015, p. 25. |
| [138] | Yu, J.; Nalla, P.; Matsushita, Y.; Harm, G.; Wang, J.; Kolics, A.; Zhao, L.; Mountsier, T.; Besser, P.; Wu, H.-J. In 2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC), IEEE, San Jose, 2016, p. 111. |
| [139] | Inoue, F.; Harada, Y.; Koyanagi, M.; Fukushima, T.; Yamamoto, K.; Tanaka, S.; Wang, Z.; Shingubara, S. Electrochem. Solid-State Lett. 2009, 12, H381. |
| [140] | Mariappan, M.; Mori, K.; Koyanagi, M.; Fukushima, T. In 2021 IEEE 71st Electronic Components and Technology Conference (ECTC), IEEE, Singapore, 2021, p. 315. |
| [141] | Kawano, M.; Takahashi, N.; Komuro, M.; Matsui, S. In 2010 Proceedings 60th Electronic Components and Technology Conference (ECTC), IEEE, Las Vegas, 2010, p. 1094. |
| [142] | Du, Y.; Wu, D.; Song, Z.; Liu, M.; Yang, S.; Wang, Z. J. Microelectromech. Syst. 2016, 25, 770. |
| [143] | Murugesan, M.; Fukushima, T.; Koyanagi, M. In 2019 30th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC), IEEE, Saratoga Springs, 2019, p. 1. |
| [144] | Kim, J.-D. J. Electron. Mater. 2006, 35, 273. |
| [145] | Kim, J. D.; Kim, Y. N.; Lee, J. W.; Park, J. H.; Kim, H. G.; Kim, J. O. In 28th International Electronics Manufacturing Technology Symposium, IEEE, San Jose, 2003, p. 319. |
| [146] | Wu, B.; Huang, J.-M.; Tan, G.-Z.; Hao, Z.-F.; Hu, G.-H.; Cui, Z.-Y.; Luo, J.-Y.; Tan, B.-Z.; Yang, Y.-X.; Li, X.-B.; Li, X.-F.; Liu, B.-Y. Surf. Technol. 2021, 148. (in Chinese) |
| [146] | ( 吴博, 黄静梦, 谭桂珍, 郝志峰, 胡光辉, 崔子雅, 罗继业, 谭柏照, 杨应喜, 李小兵, 黎小芳, 刘彬云, 表面技术 2021, 148.) |
| [147] | Watanabe, N.; Nemoto, S.; Kikuchi, K.; Aoyagi, M.; Tokuhisa, T.; Owada, T.; Kato, M. In 2014 IEEE 16th Electronics Packaging Technology Conference (EPTC), IEEE, Singapore, 2014, p. 525. |
| [148] | Koo, J.-K.; Lee, J.-H. Electron. Mater. Lett. 2014, 10, 485. |
| [149] | Koh, W.; Lin, B.; Tai, J.; In 2011 12th International Conference on Electronic Packaging Technology and High Density Packaging, IEEE, Shanghai, 2011, p. 1. |
| [150] | Koo, H.-C.; Saha, R.; Kohl, P. A. J. Electrochem. Soc. 2012, 159, D319. |
| [151] | Chen, Y.; Wei, Y.; Chen, Z.; Zhang, W.; Wang, F.; Zhu, W. In 2021 22nd International Conference on Electronic Packaging Technology (ICEPT), IEEE, Xiamen, 2021, p. 1. |
| [152] | Weng, I. A.; Hung, H. T.; Yang, S.; Chen, Y. H.; Kao, C. R. In 2018 International Conference on Electronics Packaging and iMAPS All Asia Conference (ICEP-IAAC), IEEE, Mie, 2018, p. 87. |
| [153] | Yang, S.; Hung, H.; Nishikawa, H.; Kao, C. R. In 2018 IEEE 68th Electronic Components and Technology Conference (ECTC), IEEE, San Diego, 2018, p. 308. |
| [154] | Yang, S.; Hung, H. T.; Chen, Y. B.; Kao, C. R. In 2016 11th International Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT), IEEE, Taipei, 2016, p. 111. |
| [155] | Zhang, Y.; Chen, H.; Fan, H.; Yang, J.; Wu, J.; In 2021 IEEE 71st Electronic Components and Technology Conference (ECTC), IEEE, San Diego, 2021, p. 402. |
| [156] | Xu, C.; Wu, M.-X.; Wang, W.-C.; Chen, Z.-D. Plating Finish. 2018, 40, 39. (in Chinese) |
| [156] | ( 许超, 吴敏娴, 王文昌, 陈智栋, 电镀与精饰, 2018, 40, 39.) |
| [157] | Wang, Z.-Y.; Jin, L.; Yang, J.-Q.; Li, W.-Q.; Zhan, D.-P.; Yang, F.-Z.; Sun, S.-G. J. Electrochem. 2021, 27, 316. (in Chinese) |
| [157] | 王赵云, 金磊, 杨家强, 李威青, 詹东平, 杨防祖, 孙世刚, 电化学, 2021, 27, 316.) |
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