Application Study of Open Circuit Potential-Time Technology and Atomic Force Microscopy on Si(100)/Solution Interface in Ag Electroless Deposition

Acta Chimica Sinica ›› 2002, Vol. 60 ›› Issue (11): 1923-1928. Previous Articles Next Articles

Original Articles

硅电极/溶液界面开路电位-时间谱和原子力显微镜在化学镀Ag中的应用研究

佟浩;王春明

兰州大学化学化工学院,兰州(730000)

发布日期:2002-11-15

Application Study of Open Circuit Potential-Time Technology and Atomic Force Microscopy on Si(100)/Solution Interface in Ag Electroless Deposition

Tong Hao;Wang Chunming

Department of Chemistry, Lanzhou University,Lanzhou(730000)

Published:2002-11-15

Abstract

The adsorption state of the Si(100)/solution investigated by using open circuit potential-time technology (Op-t) in the study of electroless deposition of silver. The obtained results were compared with the surface morphology information at nanometer size from atomic force microscopy (AFM). Cyclic voltammetry (CV) was also used for the comparison. It was found that the Op-t curves showed obvious difference for the different interface state such as the monolayer adsorption of Ag~+ ions, the electrode reaction of the monolayer deposited Ag~+ ions and the bulk deposition of Ag~+ ions.

Key words: AFM, SILICON, CHEMICAL PLATING, SILVER, CYCLOVOLTAMGRAPH

CLC Number:

O646

Cite this article

Tong Hao;Wang Chunming. Application Study of Open Circuit Potential-Time Technology and Atomic Force Microscopy on Si(100)/Solution Interface in Ag Electroless Deposition[J]. Acta Chimica Sinica, 2002, 60(11): 1923-1928.

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硅电极/溶液界面开路电位-时间谱和原子力显微镜在化学镀Ag中的应用研究

Application Study of Open Circuit Potential-Time Technology and Atomic Force Microscopy on Si(100)/Solution Interface in Ag Electroless Deposition

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