化学学报 ›› 2011, Vol. 69 ›› Issue (21): 2539-2542.DOI: 10.6023/A1104022Q 上一篇    下一篇

研究论文

氧化石墨烯薄膜的光电化学性质

王纪学,王科志*,杨洪强,黄喆   

  1. (北京师范大学化学学院 北京 100875)
  • 收稿日期:2011-04-02 修回日期:2011-05-25 出版日期:2011-11-14 发布日期:2011-06-03
  • 通讯作者: 王科志 E-mail:kzwang@bnu.edu.cn
  • 基金资助:

    晶态薄膜材料及其全固态杂化太阳能电池的研究

Photoelectrochemical Properties of Graphene Oxide Film

WANG Ji-Xue, WANG Ke-Zhi, YANG Hong-Qiang, HUANG Zhe   

  1. (College of Chemistry, Beijing Normal University, Beijing 100875)
  • Received:2011-04-02 Revised:2011-05-25 Online:2011-11-14 Published:2011-06-03
  • Contact: Ke-ZHi Wang E-mail:kzwang@bnu.edu.cn

用改进的Hummers法制备了氧化石墨烯(GO), 在质子化的氧化铟-氧化硒导电玻璃基片上制备了静电自组装薄膜, 通过紫外-可见光谱和扫描电镜对薄膜进行了表征并研究了薄膜的光电化学性质. 结果表明, GO薄膜是一种稳定的光电阴极材料, 在光强为100 mW/cm2的白光照射下, 偏压为-0.4 V时, 0.1 mol•L-1的Na2SO4溶液中薄膜电极的光电流密度达3.72 μA/cm2.

关键词: 氧化石墨烯, 自组装膜, 光电性质

Graphene oxide (GO) was prepared using a modified Hummers approach, and deposited by electrostatically assembly technique onto protonated indium-tin oxide (ITO) coated glass substrate. The thus-formed GO thin film was characterized by using UV-visible absorption spectroscopy and scanning electron microscopy. The GO coated ITO electrode in 0.1 mol•L-1 Na2SO4 was also subjected to photoelectrochemical studies, and was found to exhibit stable cathodic photocurrent density of 3.72 μA/cm2 under white light irradiance of 100 mW/cm2 and -0.4 V bias voltage.

Key words: graphene oxide, self-assembled film, photoelectrochemical property