Acta Chim. Sinica ›› 2017, Vol. 75 ›› Issue (3): 271-279.DOI: 10.6023/A16100552 Previous Articles     Next Articles



谭晓宇, 杨少延, 李辉杰   

  1. 中国科学院半导体研究所 半导体材料科学重点实验室 北京 100083
  • 投稿日期:2016-10-17 修回日期:2017-01-21 发布日期:2017-02-13
  • 通讯作者: 杨少延,,Tel.:010-82304968;李辉杰,,Tel.:010-82304968;
  • 作者简介:谭晓宇,中国科学院半导体研究所2016级在读博士生,研究方向为宽禁带半导体的可控制备;杨少延,中国科学院半导体所,研究员.主要从事宽禁带和超宽禁带半导体的材料、器件及物理研究;李辉杰,中国科学院半导体研究所,助理研究员.研究方向为氮化物的材料生长及器件制备.
  • 基金资助:


Epitaxy of III-Nitrides Based on Two-Dimensional Materials

Tan Xiaoyu, Yang Shaoyan, Li Huijie   

  1. Institute of Semiconductors, Chinese Academy of Sciences, Key Laboratory of Semiconductor Materials Science, Beijing 100083
  • Received:2016-10-17 Revised:2017-01-21 Published:2017-02-13
  • Supported by:

    Project supported by the National Natural Science Foundation of China (Nos. 61504128, 61504129, 61274041, and 11275228), the 863 High Technology R&D Program of China (Nos. 2014AA032609 and 2015AA016801), National Key Research and Development Plan (No. 2016YFB0400601), and the Guangdong Provincial Scientific and Technologic Planning Program (No. 2014B010119002).

III-nitrides have attracted huge interest from commercial market of lighting, power electronics and communications due to their unique optoelectronic properties, while their further enlargement is hampered by the limited crystal quality resulting from current heterogeneous epitaxy techniques. Recently, the exotic properties of layered two-dimensional materials have caught wide attention. The weak van der Waals interaction between the layers of two dimensional materials may help III-nitrides improving the crystal quality by relieving mismatching between lattice and thermal expansion, reducing costs of preparation by reusing expensive substrate, and realizing the fabrication of flexible devices, which will facilitates their generalization in wearable and foldable applications. This review present a comprehensive summary on the recent progress in regard of the III-nitride synthesis on the two-dimensional materials, including graphene, hexagonal boron nitride and transition metal dichalcogenides. Various attempts and their results are presented. Two important aspects in the preparation of GaN and AlN on two-dimensional materials are presented, which are the nucleation on defects and the lateral overgrowth of the nitride islands. A detailed knowledge on the nucleation and lateral overgrowth mechanism and precise controlling on the density and distribution of defects are indispensable for the ultimate realization of this route. The challenges and opportunities are also discussed.

Key words: gallium nitride, graphene, hexagonal boron nitride, transition metal dichalcogenides