Acta Chimica Sinica ›› 1983, Vol. 41 ›› Issue (9): 769-775.     Next Articles

Original Articles

n-InP半导体电极平带电位的研究

钱士元;钱道荪;孙壁柔   

  1. 上海交通大学应用化学系
  • 发布日期:1983-09-15

A study of the flat-band potential of N-InP semiconductor electrode

QIAN SHIYUAN;QIAN DAOSUN;SUN BIROU   

  • Published:1983-09-15

In this paper the flat-band potential of (111) plane, of n-InP, is determinated by two methods, the first is to determine the differential capacitance and the second is to determine the open-circuit potential when the electrode is illuminated with a light of enough intensity. The results obtained from these two methods differ less than 0.14V. Many factors, such as pH, redox couplex, frequency, crystalline plane and surface treatment are investigated. The influence of pH on the flat-band potential is -56V/pH, and four redox couples, i.e. Fe2+/Fe3+, I-/I3-, Fe((CN)6)4-/Fe((CN)6)3-, S2-/(Sn)2- as well as the frequencies do not influence the flat-band potential, the relexation phenomena of the capacitance and the resistance can be explained by the existence of surface states. The crystalline plane and the surface treatment influence the flat-band potential obviously. Finally, the donor concentration and the position of the energy band edge are calculated.

Key words: ELECTRODE, SEMICONDUCTOR MATERIAL, ELECTRODE POTENTIAL

CLC Number: