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化学学报
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化学学报 ›› 1991, Vol. 49 ›› Issue (10): 998-1002. 上一篇    下一篇

研究论文

金属修饰半导体硅组成光电化学电池的研究

李怀祥;王士勋;李国铮   

  1. 山东大学化学系
  • 发布日期:1991-10-15

A study on photoelectrochemical cells based on silicon modified by metal films

LI HUAIXIANG;WANG SHIXUN;LI GUOZHAENG   

  • Published:1991-10-15

PDF

806

被引次数

5

本文以n/n^+-Si和p/n^+-Si为基底, 通过铂、镍等金属膜表面修饰后组成光电化学电池, 探讨了金属/n-Si间的Schottky势垒对电池开路光电压的影响。研究了铂膜修饰电极的光电化学性能。用p/n^+-Si电极, 在65mW·cm^-^2的光照射下, 最佳电池的输出参数是: 开路光电压0.530V, 短路光电流47.6mA·cm^-^2, 填充因子0.35, 光电转换效率13.6%, 连续照光75小时, 电池性能基本稳定。

关键词: 铂, 硅, 镍, 金属薄膜, 化学修饰电极, 太阳能电池, 肖特基势垒, 光电化学电池

Photoelectrochem. cells of n/n+-Si or p/n+-Si with a metal (Pt, Au, Cu, Ni) Schottky barrier between the semiconductor and the Br redox couple electrolyte were studied. An optimized Pt/p/n+-Si cell had an open circuit voltage of 0.530 V, short circuit current of 47.6 mA/cm2, fill factor of 0.35 and energy conversion efficiency of 13.6%, under 65 mW/cm2 illumination. The photovoltaic parameters of some of the cells remained stable even after continuous irradiation for 75 h.

Key words: PLATINUM, SILICON, NICKEL, METAL THIN FILMS, CHEMICAL MODIFIED ELECTRODE, SOLAR CELLS, SCHOTTKY BARRIER, PHOTOELECTROCHEMICAL CELL

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