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化学学报
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化学学报 ›› 2004, Vol. 62 ›› Issue (15): 1415-1418. 上一篇    下一篇

研究论文

碱性水溶液中甲醛在硅电极表面的电化学行为及其对硅化学刻蚀的影响

宋焱焱, 张禹, 夏兴华   

  1. 南京大学化学化工学院生命分析化学教育部重点实验室, 南京, 210093
  • 投稿日期:2003-10-23 修回日期:2004-02-16 发布日期:2014-02-17
  • 通讯作者: 夏兴华,E-mail:xhxia@nju.edu.cn;Fax:025-83597436 E-mail:xhxia@nju.edu.cn
  • 基金资助:
    教育部回国人员启动经费和教育部博士点基金(No.20020284021)资助项目.

Influence of Formaldehyde on the Electrochemistry and Chemical Etching of Silicon in Alkaline Solutions

SONG Yan-Yan, ZHANG Yu, XIA Xing-Hua   

  1. Key Laboratory of Analytical Chemistry for Life Science, Department of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210093
  • Received:2003-10-23 Revised:2004-02-16 Published:2014-02-17

PDF

384

被引次数

10

研究了KOH水溶液中氧化剂甲醛在p-Si和n-Si(100)单晶半导体电极表面的电化学行为及其对硅化学刻蚀表面形貌的影响.实验结果表明,甲醛不仅影响p-和n-型半导体电极在碱性溶液中的阳极氧化峰电流,而且在负电位区能在Si(100)电极上发生还原.在光照条件下,p-Si(100)电极上也观测到了HCHO的电化学还原及光电流倍增效应.甲醛在硅电极表面的电化学还原反应分两步进行,反应终产物为甲醇.此外,HCHO能有效抑制碱性溶液中Si表面"金字塔"型表面粗糙颗粒的形成.

关键词: 硅, 氧化剂, 甲醛, 化学刻蚀, 表面平整

The effect of oxidizing agent HCHO on the electrochemistry and etching morphology of p-type and n-type (100) silicon electrodes in a KOH solution has been studied.The results indicate that HCHO has a strong influence on the anodic behavior of both p-Si and n-Si electrodes in alkaline solutions.A reduction current of HCHO on an n-Si(100) electrode was observed in the dark due to the conduction band electron.The electrochemical reduction of HCHO on a p-Si(100) could only be observed under illumination.In this case a photocurrent doubling phenomenon was observed.It was suggested that reduction of HCHO in alkaline solution occurs in two steps, giving methanol as the final reaction product.It was found that HCHO could be used to control the surface morphology of silicon during chemical etching in alkaline solutions.

Key words: silicon, oxidizing agent, formaldehyde, chemical etching, pyramid suppression