基于有机双层的双极性有机场效应晶体管研究进展

doi:10.6023/cjoc202107016

摘要/Abstract

由双极性有机场效应晶体管(OFETs)制备的有机互补电路具有操作电压低、能耗低和成本低等优点, 在有机互补电路方面有很大的应用前景, 引起了科学家们极大的研究兴趣. 同时具有高且匹配的空穴迁移率和电子迁移率的双极性有机半导体分子是制备高性能有机互补电路的必要条件之一, 然而迄今为止该类双极性有机半导体分子的报道比较少, 大部分双极性有机半导体分子的空穴和电子传输不匹配; 高性能单极性有机半导体分子报道已有成千上万种, 选择迁移率相匹配的n型有机半导体分子和p型有机半导体分子构筑具有垂直双层导电沟道的有机场效应晶体管是制备高性能双极性有机场效应晶体管的有效方法. 总结了构筑基于有机双层的高性能双极性有机场效应晶体管的必要条件, 已报道的有机双层场效应晶体管的电学性能, 以及影响双极性场效应性能的因素.

关键词: 有机场效应晶体管, 双极性, 有机双层, 匹配, 迁移率

Complementary circuits made of ambipolar organic field-effect transistors (OFETs) have the advantages of low signal to noise ratio, low operation voltage, low power consumption, and so on. Up to now, only a few ambipolar organic semiconductors with balanced hole and electron mobilities have been reported, which is one of the key requirements for high performance complementary circuits. There are thousands of high performance unipolar organic semiconductors. The conducting channels based on both an n-type and a p-type organic semiconductors, which have matched mobilities, will be an effective way to build a high performance ambipolar OFETs. In this review, the key requirements, the electrical properties, and factors correlating with the performance of ambipolar OFETs based on organic bilayer are reported.

Key words: organic field-effect transistors (OFETs), ambipolar, organic bilayer, balanced, mobility

引用此文

李敏, 吕爱风. 基于有机双层的双极性有机场效应晶体管研究进展[J]. 有机化学, 2022, 42(1): 54-66.

Min Li, Aifeng Lv. Recent Progress in Ambipolar Organic Field-Effect Transistors Based on Organic Semiconductor Bilayer[J]. Chinese Journal of Organic Chemistry, 2022, 42(1): 54-66.

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图/表 12

图1. 基于有机双层的双极性场效应晶体管的两种载流子传输

Figure 1. Charge carrier transport of ambipolar transistors based on organic bilayer (a) n-Type charge transport and (b) p-type transport. (–) represents the movement of electrons and (+) represents the movement of holes

OSC	μ_h/(cm²•V^–1•s^–1)	μ_e/(cm²•V^–1•s^–1)	HOMO/eV	LUMO/eV
1A/1B^[6]	0.004	0.005	—/–7.1	—/-3.8
1D/1C^[12]	2.96×10^–3	9.49×10^–3	-6.1/-5.95	–4.9/–4.35
1A/1E^[20]	0.0035	0.0095	—/–6.7	—/–4.3
1F/1D^[19a]	23.7	0.06	–5.4/–6.1	–2.4/–4.7
1B/1H^[18]	0.2	0.04	–7.1/–5.0	–3.8/–3.0
1G/1D^[7a]	0.12	3×10^–2	—/–6.1	—/–4.9
1D/1C^[9c]	10^–6	10^–6	–6.1/–5.2	–4.9/–3.5
1H/1I^[13,21]	0.41	0.40	–5.0/–5.4	–3.0/–3.4
1C/1J^[10]	1.8×10^–4	2.1×10^–4	–5.2/–5.3	–3.5/–4.0
1H/1K^[15]	0.34	0.03	-5.0/–6.5	–3.0/–4.0
1L/1M^[16]	5.0×10^–2	1.6×10^–2	–5.3/–4.8	-3.2/–2.8
1N/1O^[17]	1.7×10^–2	2.2×10^–2	—/–7.24	—/–3.61
1P/1Q^[14]	0.87	0.82	–5.75/–5.60	–4.15/–2.60

表1. 基于有机-有机双层的双极性场效应晶体管的空穴迁移率、电子迁移率和HOMO/LUMO的总结

Table 1. Summary of hole/electron mobility, HOMO, and LUMO obtained from ambipolar OFETs based on organic-organic bilayer

图2. 双极性有机场效应晶体管中有机-有机双层的有机半导体分子结构

Figure 2. Molecular structures of OSCs applied in the ambipolar OFETs based on organic-organic bilayer

图3. F16CuPc (5 nm)/CuPc (10 nm)有机双层和CuPc (5 nm)/F16CuPc (15 nm)有机双层的AFM表征图

Figure 3. AFM morphology of (a) an F16CuPc (5 nm)/CuPc (10 nm) organic bilayer, (b) a CuPc (5 nm)/F16CuPc (15 nm) organic bilayer, respectively

图4. BP2T不同厚度薄膜表面的原子力表征图

Figure 4. AFM images of BP2T films with different thicknesses (a) 0.5 nm, (b) 1 nm, (c) 2 nm, (d) 3 nm, (e) 5 nm, (f) 6 nm, (g) 20 nm, (h) 30 nm (all images are 4 μm×4 μm)[7a]

OSC	μ_h/(cm²•V^–1•s^–1)	I_on/off(hole)	μ_e/(cm²•V^–1•s^–1)	I_{on/off(electron)}	HOMO/eV	Conducting band/eV
ZnO/1H^[26]	0.34	10³	0.38	10⁴	–5.0	–4.4
ZnInO_x/1H^[28]	0.14	—	13.8	—	–5.0	—
InO_x/1H^[29]	1.1	—	0.1	—	–5.0	—
MoS₂/2A^[31]	0.36	10³	1.27	10³	–5.36	–4.0
ZnO/2B^[32]	2.4	10³	4.5	10³	—	–4.4
IGZOs/2C^[33]	4.5	—	5.1	—	–5.3	–4.3
IGZOs/1F^[33]	2.8	—	5.1	—	–5.1	–4.3
ZnO/1N^[34]	5.1×10^–2	—	1.2×10^–2	—	–5.1	–4.3
IGO/1N^[1B]	1.09	10²	1.80	10³	—	—
InO/2D^[35]	1.1	3.8×10²	1.5	1.2×10²	–5.36	—

表2. 基于有机/无机双层的双极性场效应晶体管的空穴迁移率、电子迁移率、电流开关比、HOMO和导带能级的总结

Table 2. Summary of μh, μe, Ion/off, HOMO, conducting band obtained from ambipolar OFETs based on organic-organic bilayer

图5. 双极性场效应晶体管中有机-无机双层及平行导电沟道的有机半导体分子结构式

Figure 5. Molecular structures of OSCs applied in the ambipolar OFETs based on organic-inorganic bilayer and parallel conducting channel

图6. 基于C8-BTBT/a-IGZO反相器输入电压为50 V (a)和–60 V (b)时的转移曲线[33]

Figure 6. Supply voltages at 50 V (a) and –60 V (b) based on C8-BTBT/a-IGZO inverters Inset is schematic of the inverter circui

图7. 基于平行导电沟道的双极性有机场效应晶体管: (a)正面示意图和(b)侧面示意图

Figure 7. Device structure of ambipolar OFETs with parallel p and n conducting channel: (a) front view and (b) side view

图8. 双极性有机场效应晶体管导电沟道为p/n有机半导体混合物的分子结构式

Figure 8. Molecular structures of OSCs applied in the ambipolar OFETs based on p/n organic blends

图9. (a)介电层聚合物P(VDF-TrFE)的化学结构式和(b)有机半导体材料和介电层界面的前沿轨道能级示意图[53]

Figure 9. (a) Molecular structure of P(VDF-TrFE) and (b) schematic diagram of the energy levels at the OSCs-dielectric interface

图10. 基于有机双层的双极性场效应晶体管的四种器件结构: (a)顶接触型, (b)底接触型, (c)中间接触型和(d)双栅极型

Figure 10. Four device structures of ambipolar OFETs based on organic bilayers: (a) top-contact, (b) bottom-contact, (c) middle-contact and (d) dual-gate type

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