Studies on Photoinduced Carbon-Silicon Bond Cleavage and Subsequent Bromination Reaction

doi:10.6023/cjoc201412028

Chin. J. Org. Chem. ›› 2015, Vol. 35 ›› Issue (6): 1375-1379.DOI: 10.6023/cjoc201412028 Previous Articles Next Articles

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光照条件下碳-硅键断裂及其溴代反应研究

孙京^a, 彭新华^a, 郭浩^b

a 南京理工大学化工学院南京 210094;
b 复旦大学化学系上海 200433

收稿日期:2014-12-17 修回日期:2015-01-14 发布日期:2015-02-02
通讯作者: 彭新华, 郭浩 E-mail:xinhpeng@njust.edu.cn;hao_guo@fudan.edu.cn
基金资助:
教育部高等学校博士学科点专项科研基金(No. 20110071120004)资助项目.

Studies on Photoinduced Carbon-Silicon Bond Cleavage and Subsequent Bromination Reaction

Sun Jing^a, Peng Xinhua^a, Guo Hao^b

a School of Chemical Engineering, Nanjing University of Science and Technology, Nanjing 210094;
b Department of Chemistry, Fudan University, Shanghai 200433

Received:2014-12-17 Revised:2015-01-14 Published:2015-02-02
Supported by:
Project supported by the Specialized Research Fund for the Doctoral Program of Higher Education (No. 20110071120004).

1. Studies on Photoinduced Carbon-Silicon Bond Cleavage and Subsequent Bromination Reaction.PDF(1257KB)

Abstract

A novel photoinduced bromination of benzylsilanes is reported. This reaction undergoes smoothly under UV irradiation at room temperature via two key steps: C—Si bond cleavage and subsequent bromination, which presents a new protocol to the synthesis of benzyl bromides. In addition, a possible mechanism of this reaction is proposed.

Key words: photochemistry, bromination, mechanism, radical reactions, organicsilanes

Cite this article

Sun Jing, Peng Xinhua, Guo Hao. Studies on Photoinduced Carbon-Silicon Bond Cleavage and Subsequent Bromination Reaction[J]. Chin. J. Org. Chem., 2015, 35(6): 1375-1379.

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光照条件下碳-硅键断裂及其溴代反应研究

Studies on Photoinduced Carbon-Silicon Bond Cleavage and Subsequent Bromination Reaction

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