介电层上石墨烯的制备

doi:10.6023/A13090989

摘要/Abstract

石墨烯因其优异而独特的性能，自发现以来便受到了广泛的关注. 为了实现石墨烯的进一步应用，可控制备大面积、高质量的石墨烯便成为研究人员需要首先攻克的难题. 利用传统方法在金属基底上催化生长的石墨烯，需要先转移到介电层上才能进行后续的器件构筑. 与之相比，介电层表面上直接生长石墨烯后，就可直接利用目前的硅加工工艺制备器件，从而避免因转移而引起的污染、破损，进而有望得到高质量、无污染的石墨烯样品. 介绍了近年来介电层上直接生长石墨烯的研究进展，其中包括在各种传统介电层材料和新型六方氮化硼薄膜上制备石墨烯的各种方法.总结展望了介电层表面石墨烯制备的主要挑战及发展方向.

关键词: 石墨烯, 化学气相沉积, 介电层, 六方氮化硼

Graphene has caught wide attention due to its unique and excellent properties since its first isolation in 2004. Controllable synthesis of graphene with large-area and high-quality is critical for the realization of various graphene based applications. Although scalable graphene could be grown on metal substrates by chemical vapor deposition (CVD) method, as-grown graphene needs to be transferred onto a dielectric layer for further devices construction. The direct synthesis of graphene on dielectric substrates could avoid the damages and contaminations caused by the transfer process. In this review, we provide a comprehensive progress regarding the synthesis of graphene on dielectric substrates including traditional ones (i.e., glass, quartz, amorphous SiO₂, Si₃N₄ and Al₂O₃) and two dimensional hexagonal boron nitride films. The growth techniques based on CVD approach are classified into metal-catalyzed, metal-free and plasma-enhanced CVD. The growth procedures for each technique are first described, and the main results in terms of as-grown graphene sample's properties such as its electron transport, layer number, crystallinity and quality are then discussed. These studies point to the important role of techniques and experimental conditions in tuning various properties of graphene product. With this idea in mind, we summarize the information of growth conditions and graphene-related properties in different cases, which provides a useful reference for comparing and evaluating the advantages and disadvantages of various techniques. Moreover, we discuss the major challenges in this growing field. Although metal catalyzed CVD could achieve the grown graphene placed on the underlying dielectric substrates by the post removal of metal, it still cannot avoid the metal contaminations or damage of graphene. The main limitation for graphene metal-free synthesis on dielectric substrates is associated with very slow growth rate of graphene and the difficult control of defect-free sample. New growth techniques, suitable dielectric substrates or unexplored experimental conditions are expected to be developed to overcome these challenges in future.

Key words: graphene, chemical vapour deposition, dielectric layer, hexagonal boron nitride

引用此文

陈集思, 武斌, 刘云圻. 介电层上石墨烯的制备[J]. 化学学报, 2014, 72(3): 359-366.

Chen Jisi, Wu Bin, Liu Yunqi. Synthesis of Graphene on Dielectric Substrates[J]. Acta Chimica Sinica, 2014, 72(3): 359-366.

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参考文献

[1] Landau, L. Phys. Z. Sowjetunion 1937, 11, 26.

[2] Novoselov, K. S.; Geim, A. K.; Morozov, S. V.; Jiang, D.; Zhang, Y.; Dubonos, S. V.; Grigorieva, I. V.; Firsov, A. A. Science 2004, 306, 666.

[3] Geim, A. K.; Novoselov, K. S. Nat. Mater. 2007, 6, 183.

[4] Lee, C.; Wei, X. D.; Kysar, J. W.; Hone, J. Science 2008, 321, 385.

[5] Du, X.; Skachko, I.; Barker, A.; Andrei, E. Y. Nat. Nanotechnol. 2008, 3, 491.

[6] Kim, K. S.; Zhao, Y.; Jang, H.; Lee, S. Y.; Kim, J. M.; Kim, K. S.; Ahn, J.-H.; Kim, P.; Choi, J.-Y.; Hong, B. H. Nature 2009, 457, 706.

[7] Seol, J. H.; Jo, I.; Moore, A. L.; Lindsay, L.; Aitken, Z. H.; Pettes, M. T.; Li, X. S.; Yao, Z.; Huang, R.; Broido, D.; Mingo, N.; Ruoff, R. S.; Shi, L. Science 2010, 328, 213.

[8] Nair, R. R.; Blake, P.; Grigorenko, A. N.; Novoselov, K. S.; Booth, T. J.; Stauber, T.; Peres, N. M. R.; Geim, A. K. Science 2008, 320, 1308.

[9] Li, X.; Wang, X.; Zhang, L.; Lee, S.; Dai, H. Science 2008, 319, 122.

[10] Bae, S.; Kim, H.; Lee, Y.; Xu, X. F.; Park, J. S.; Zheng, Y.; Balakrishnan, J.; Lei, T.; Kim, H. R.; Song, Y. I.; Kim, Y. J.; Kim, K. S.; Ozyilmaz, B.; Ahn, J. H.; Hong, B. H.; Iijima, S. Nat. Nanotechnol. 2010, 5, 574.

[11] Fowler, J. D.; Allen, M. J.; Tung, V. C.; Yang, Y.; Kaner, R. B.; Weiller, B. H. ACS Nano 2009, 3, 301.

[12] Zhang, Y.; Fan, Y.; Wang, S.; Tan, Y.; Shen, X.; Shi, Z. Chin. J. Chem. 2012, 30, 1163.

[13] Liu, C. G.; Yu, Z. N.; Neff, D.; Zhamu, A.; Jang, B. Z. Nano Lett. 2010, 10, 4863.

[14] Dikin, D. A.; Stankovich, S.; Zimney, E. J.; Piner, R. D.; Dommett, G. H.; Evmenenko, G.; Nguyen, S. T.; Ruoff, R. S. Nature 2007, 448, 457.

[15] Eda, G.; Fanchini, G.; Chhowalla, M. Nat. Nanotechnol. 2008, 3, 270.

[16] Cai, J.; Ruffieux, P.; Jaafar, R.; Bieri, M.; Braun, T.; Blankenburg, S.; Muoth, M.; Seitsonen, A. P.; Saleh, M.; Feng, X. Nature 2010, 466, 470.

[17] Emtsev, K. V.; Bostwick, A.; Horn, K.; Jobst, J.; Kellogg, G. L.; Ley, L.; McChesney, J. L.; Ohta, T.; Reshanov, S. A.; Rohrl, J.; Rotenberg, E.; Schmid, A. K.; Waldmann, D.; Weber, H. B.; Seyller, T. Nat. Mater. 2009, 8, 203.

[18] Li, X. S.; Cai, W. W.; An, J. H.; Kim, S.; Nah, J.; Yang, D. X.; Piner, R.; Velamakanni, A.; Jung, I.; Tutuc, E.; Banerjee, S. K.; Colombo, L.; Ruoff, R. S. Science 2009, 324, 1312.

[19] Berger, C.; Song, Z.; Li, X.; Wu, X.; Brown, N.; Naud, C.; Mayou, D.; Li, T.; Hass, J.; Marchenkov, A. N. Science 2006, 312, 1191.

[20] Fang, N.; Liu, F.; Liu, X.; Liao, X.; Liao, R.; Miao, L.; Jiang, J. Acta Chim. Sinica 2012, 70, 2197. (方楠, 刘风, 刘小瑞, 廖瑞娴, 缪灵, 江建军, 化学学报, 2012, 70, 2197.)

[21] Kim, K. S.; Zhao, Y.; Jang, H.; Lee, S. Y.; Kim, J. M.; Kim, K. S.; Ahn, J. H.; Kim, P.; Choi, J. Y.; Hong, B. H. Nature 2009, 457, 706.

[22] Gao, T.; Xie, S.; Gao, Y.; Liu, M.; Chen, Y.; Zhang, Y.; Liu, Z. ACS Nano 2011, 5, 9194.

[23] Pan, Y.; Zhang, H.; Shi, D.; Sun, J.; Du, S.; Liu, F.; Gao, H. J. Adv. Mater. 2009, 21, 2777.

[24] Li, X.; Magnuson, C. W.; Venugopal, A.; Tromp, R. M.; Hannon, J. B.; Vogel, E. M.; Colombo, L.; Ruoff, R. S. J. Am. Chem. Soc. 2011, 133, 2816.

[25] Yu, Q.; Jauregui, L. A.; Wu, W.; Colby, R.; Tian, J.; Su, Z.; Cao, H.; Liu, Z.; Pandey, D.; Wei, D. Nat. Mater. 2011, 10, 443.

[26] Gao, L.; Ren, W.; Xu, H.; Jin, L.; Wang, Z.; Ma, T.; Ma, L.-P.; Zhang, Z.; Fu, Q.; Peng, L.-M.; Bao, X.; Cheng, H. Nat. Commun. 2012, 3, 699.

[27] Zhou, H.; Yu, W. J.; Liu, L.; Cheng, R.; Chen, Y.; Huang, X.; Liu, Y.; Wang, Y.; Huang, Y.; Duan, X. Nat. Commun. 2013, 4, 2096.

[28] Wu, B.; Geng, D.; Guo, Y.; Huang, L.; Xue, Y.; Zheng, J.; Chen, J.; Yu, G.; Liu, Y.; Jiang, L. Adv. Mater. 2011, 23, 3522.

[29] Geng, D.; Wu, B.; Guo, Y.; Huang, L.; Xue, Y.; Chen, J.; Yu, G.; Jiang, L.; Hu, W.; Liu, Y. Proc. Natl. Acad. Sci. U. S. A. 2012, 109, 7992.

[30] Wu, B.; Geng, D.; Xu, Z.; Guo, Y.; Huang, L.; Xue, Y.; Chen, J.; Yu, G.; Liu, Y. NPG Asia Mater. 2013, 5, 36.

[31] Wang, Y.; Zheng, Y.; Xu, X.; Dubuisson, E.; Bao, Q.; Lu, J.; Loh, K. P. ACS Nano 2011, 5, 9927.

[32] Li, X. S.; Cai, W. W.; Colombo, L.; Ruoff, R. S. Nano Lett. 2009, 9, 4268.

[33] Levendorf, M. P.; Ruiz-Vargas, C. S.; Garg, S.; Park, J. Nano Lett. 2009, 9, 4479.

[34] Ismach, A.; Druzgalski, C.; Penwell, S.; Schwartzberg, A.; Zheng, M.; Javey, A.; Bokor, J.; Zhang, Y. Nano Lett. 2010, 10, 1542.

[35] Yan, Z.; Peng, Z.; Sun, Z.; Yao, J.; Zhu, Y.; Liu, Z.; Ajayan, P. M.; Tour, J. M. ACS Nano 2011, 5, 8187.

[36] Peng, Z.; Yan, Z.; Sun, Z.; Tour, J. M. ACS Nano 2011, 5, 8241.

[37] Teng, P.-Y.; Lu, C.-C.; Akiyama-Hasegawa, K.; Lin, Y.-C.; Yeh, C.-H.; Suenaga, K.; Chiu, P.-W. Nano Lett. 2012, 12, 1379.

[38] Kim, H.; Song, I.; Park, C.; Son, M.; Hong, M.; Kim, Y.; Kim, J. S.; Shin, H.-J.; Baik, J.; Choi, H. C. ACS Nano 2013.

[39] Kwak, J.; Chu, J. H.; Choi, J.-K.; Park, S.-D.; Go, H.; Kim, S. Y.; Park, K.; Kim, S.-D.; Kim, Y.-W.; Yoon, E. Nat. Commun. 2012, 3, 645.

[40] Chen, J.; Wen, Y.; Guo, Y.; Wu, B.; Huang, L.; Xue, Y.; Geng, D.; Wang, D.; Yu, G.; Liu, Y. J. Am. Chem. Soc. 2011, 133, 17548.

[41] Chen, J.; Guo, Y.; Wen, Y.; Huang, L.; Xue, Y.; Geng, D.; Wu, B.; Luo, B.; Yu, G.; Liu, Y. Adv. Mater. 2013, 25, 938.

[42] Rummeli, M. H.; Bachmatiuk, A.; Scott, A.; Borrnert, F.; Warner, J. H.; Hoffman, V.; Lin, J.-H.; Cuniberti, G.; Buchner, B. ACS Nano 2010, 4, 4206.

[43] Fanton, M. A.; Robinson, J. A.; Puls, C.; Liu, Y.; Hollander, M. J.; Weiland, B. E.; LaBella, M.; Trumbull, K.; Kasarda, R.; Howsare, C. ACS Nano 2011, 5, 8062.

[44] Hwang, J.; Kim, M.; Campbell, D.; Alsalman, H. A.; Kwak, J. Y.; Shivaraman, S.; Woll, A. R.; Singh, A. K.; Hennig, R. G.; Gorantla, S. ACS Nano 2012, 7, 385.

[45] Chhowalla, M.; Teo, K.; Ducati, C.; Rupesinghe, N.; Amaratunga, G.; Ferrari, A.; Roy, D.; Robertson, J.; Milne, W. J. Appl. Phys. 2001, 90, 5308.

[46] Bower, C.; Zhou, O.; Zhu, W.; Werder, D.; Jin, S. Appl. Phys. Lett. 2000, 77, 2767.

[47] Ren, Z.; Huang, Z.; Xu, J.; Wang, J.; Bush, P.; Siegal, M.; Provencio, P. Science 1998, 282, 1105.

[48] Dato, A.; Radmilovic, V.; Lee, Z.; Phillips, J.; Frenklach, M. Nano Lett. 2008, 8, 2012.

[49] Zhang, L.; Shi, Z.; Wang, Y.; Yang, R.; Shi, D.; Zhang, G. Nano Res. 2011, 4, 315.

[50] Kato, T.; Hatakeyama, R. ACS Nano 2012, 6, 8508.

[51] Dean, C.; Young, A.; Meric, I.; Lee, C.; Wang, L.; Sorgenfrei, S.; Watanabe, K.; Taniguchi, T.; Kim, P.; Shepard, K. Nat. Nanotechnol. 2010, 5, 722.

[52] Ding, X.; Ding, G.; Xie, X.; Huang, F.; Jiang, M. Carbon 2011, 49, 2522.

[53] Tang, S.; Ding, G.; Xie, X.; Chen, J.; Wang, C.; Ding, X.; Huang, F.; Lu, W.; Jiang, M. Carbon 2012, 50, 329.

[54] Lin, T.; Wang, Y.; Bi, H.; Wan, D.; Huang, F.; Xie, X.; Jiang, M. J. Mater. Chem. 2012, 22, 2859.

[55] Wang, M.; Jang, S. K.; Jang, W. J.; Kim, M.; Park, S. Y.; Kim, S. W.; Kahng, S. J.; Choi, J. Y.; Ruoff, R. S.; Song, Y. J. Adv. Mater. 2013, 25, 2746.

[56] Yang, W.; Chen, G.; Shi, Z.; Liu, C.-C.; Zhang, L.; Xie, G.; Cheng, M.; Wang, D.; Yang, R.; Shi, D.; Watanabe, K.; Taniguchi, T.; Yao, Y.; Zhang, Y.; Zhang, G. Nat. Mater. 2013, 12, 792.