Acta Chimica Sinica ›› 2014, Vol. 72 ›› Issue (3): 301-318.DOI: 10.6023/A13090936 Previous Articles     Next Articles

Special Issue: 石墨烯


拉曼光谱在石墨烯结构表征中的应用 2016 Awarded

吴娟霞a,b, 徐华a, 张锦a   

  1. a 北京大学纳米化学研究中心 北京大学化学与分子工程学院 北京 100871;
    b 北京大学前沿交叉学科研究院 北京 100871
  • 投稿日期:2013-09-06 发布日期:2013-11-14
  • 通讯作者: 张锦,
  • 基金资助:

    项目受国家自然科学基金(Nos. 21233001,21129001,51272006和51121091)和科技部项目(Nos. 2011YQ0301240201和2011CB932601)资助.

Raman Spectroscopy of Graphene

Wu Juanxiaaa,b, Xu Huaa, Zhang Jina   

  1. a Center for Nanochemistry, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871;
    b Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871
  • Received:2013-09-06 Published:2013-11-14
  • Supported by:

    Project supported by the National Natural Science Foundation of China (Nos. 21233001, 21129001, 51272006 and 51121091) and the Ministry of Science and Technology of the People's Republic of China (No. 2011YQ0301240201 and 2011CB932601).

Graphene, a monolayer of carbon atoms packed into a two-dimensional crystal structure, attracted intense attention owing to its unique structure and optical, electronic properties. Raman spectroscopy is a quick and precise method in material science and has been employed for many years to investigate material properties. It can be used to investigate the electronic band structure, the phonon energy dispersion and the electron-phonon interaction in graphene systems. In probing graphene's properties, Raman spectroscopy is considered to be a reliable method. In this review, we highlight recent progress of studying graphene structure using Raman spectroscopy. First, on the basis of systematically analyzing the phonon dispersion of graphene, the typical Raman scattering features of graphene, such as G band, G' band, and D band, and the basic physical process are introduced. Using these Raman fingerprints, we can quickly and directly distinguish the layer thickness of graphene, determine the edge chirality and monitor the type and density of defects in graphene. Second, stacking disorder will significantly modify the optical properties and interlayer coupling stretch of few-layer graphene so that the Raman features of graphene will be strongly influenced not only in the G band intensity but also in the intensity, lineshape and the frequency of G' band. According to the peak position, width, and intensity of the Raman G band and G' band in graphene, we also discuss the influence of doping, substrate, temperature, and strain on the electronic structure of graphene. Finally, we introduce the second order overtone and combination Raman modes and the low frequency Raman feature (shear and layer breathing mode) in graphene, and discuss the dependence of these peaks on the structure of graphene.

Key words: graphene, Raman spectroscopy, layer dependence, stacking effect, overtone and combination mode, low frequency mode