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化学学报
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化学学报 ›› 1994, Vol. 52 ›› Issue (4): 331-336. 上一篇    下一篇

研究论文

锑对在硫酸溶液中形成的阳极Pb(Ⅱ)氧化物膜的半导体性质的影响Ⅲ. 交流阻抗法研究阳极Sb~2O~3膜

浦琮;周伟舫;张亿良   

  1. 复旦大学化学系;上饶师范专科学校化学系
  • 发布日期:1994-04-15

Effect of antimony on the semiconducting properties of the anodic plumbous oxide film formed in sulfuric acid solution.Ⅲ.studies on the anodic sb~2O~3 film film with a.c.impedance.

PU CONG;ZHOU WEIFANG;ZHANG YILIANG   

  • Published:1994-04-15

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应用交流阻抗方法研究锑在0.005mol.dm^-^3SO~4+0.5mol.dm^-^3Na~2So~4溶液(30℃)中以0.9V(vs.Hg/Hg~2SO~4/0.005mol.dm^3SO~4)生长3h的阳极Sb~2O~3膜的半导体性质.从Mott-schottky曲线可知.此膜 为n型半导体.平带电位为-0.34v(vs.Hg/Hg~2SO~4/0.005mol.dm^-^3SO~4).施主密度为4.0×19^1^9cm^-^3.讨论了锑增加铅锑合金极PbⅡ氧化物膜施主密度的原因.

关键词: 锑, 硫酸, 铅化合物, 膜, 阳极, 氧化合物, 半导体, 蓄电池, 交流阻抗法

The semiconducting properties of the anodic film formed on antimony-lead alloys anodized in 0.05 moldm-3 H2SO4 + 0.5 moldm-3 Na2SO4 solution (30? at 0.9 V (vs. Hg/Hg2SO4/0.05 moldm-3 H2SO4) for 3 h were investigated using the a.c. impedance method. From the Mott-Schottky plot, the film is demonstrated to be a n-type semiconductor. The flat-band potential of the film is -0.34 V (vs. Hg/Hg2SO4/0.05 mol . dm-3 H2SO4), while the donor d. is 4.0 ?1019 cm-3. The effect of the antimony on the donor d. of the anodic lead oxide film is discussed.

Key words: STIBIUM, SULFURIC ACID, LEAD COMPOUNDS, FILMS, ANODES, OXYGEN COMPOUNDS, SEMICONDUCTOR, ACCUMULATORS

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